Fabrication and Characterization of High-Performance Anti-reflecting Nanotextured Si Surfaces for Solar Cells

Author(s):  
Stepan Nichkalo ◽  
Anatoly Druzhinin ◽  
Valeriy Yerokhov ◽  
Oleksandr Ostapiv
Vacuum ◽  
2021 ◽  
pp. 110311
Author(s):  
Shenghao Zhou ◽  
Weichen Zhao ◽  
Yaosha Wu ◽  
Zhaoguo Qiu ◽  
Songsheng Lin ◽  
...  

2011 ◽  
Vol 129 (1-2) ◽  
pp. 236-241 ◽  
Author(s):  
Atsushi Suzuki ◽  
Kengo Kobayashi ◽  
Takeo Oku ◽  
Kenji Kikuchi

Silicon ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 17-23 ◽  
Author(s):  
H. F. Al-Taay ◽  
M. A. Mahdi ◽  
D. Parlevliet ◽  
P. Jennings

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.


2017 ◽  
Vol 5 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Haruto Maruhashi ◽  
Takeo Oku ◽  
Atsushi Suzuki ◽  
Tsuyoshi Akiyama ◽  
Yasuhiro Yamasaki

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