Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

Author(s):  
Jae Young Song ◽  
Jong Pil Kim ◽  
Sang Wan Kim ◽  
Jeong-Hoon Oh ◽  
Kyung-Chang Ryoo ◽  
...  
Vacuum ◽  
2021 ◽  
pp. 110311
Author(s):  
Shenghao Zhou ◽  
Weichen Zhao ◽  
Yaosha Wu ◽  
Zhaoguo Qiu ◽  
Songsheng Lin ◽  
...  

2016 ◽  
Vol 1443 ◽  
pp. 111-117 ◽  
Author(s):  
Kaifeng Du ◽  
Qi Zhang ◽  
Shunmin Dan ◽  
Min Yang ◽  
Yongkui Zhang ◽  
...  

2017 ◽  
Vol 30 (9) ◽  
pp. 1056-1063 ◽  
Author(s):  
Hejing Sun ◽  
Haibo Zhang ◽  
Zheng Chen ◽  
Jinhui Pang ◽  
Cong Gao ◽  
...  

This study reports the fabrication and characterization of polymer resistive switching memory devices fabricated from poly(ether sulfone)s (PESs), containing carboxylic functional groups for hydrogen bonding with disperse red 1. PES-based supramolecular memory devices exhibited write-once read-many-times-type memory effects, with low switching threshold voltages below −5.0 V and high ON/OFF current ratios of 105. It is the first time that the concept of azobenzene supramolecular PES based on hydrogen bonding for electrical memory device application was investigated. A possible switching mechanism based on the charge transfer interaction was proposed through molecular simulation, optical absorption, and cyclic voltammetry. These results render the PES-based supramolecular memory devices as promising components for high-performance polymer memory devices.


Sign in / Sign up

Export Citation Format

Share Document