A Low-Voltage Log-Domain Integrator Using MOSFET in Weak Inversion

2011 ◽  
pp. 51-61 ◽  
Author(s):  
Lida Ramezani
Keyword(s):  
Low Voltage ◽  
Weak Inversion ◽  
Log Domain

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

Low-Voltage CMOS subthreshold log-domain filtering

2005 ◽  
Vol 52 (10) ◽  
pp. 2090-2100 ◽  
Author(s):  
F. Serra-Graells ◽  
J.L. Huertas
Keyword(s):  
Low Voltage ◽  
Log Domain

A New Low Voltage Analog Circuit Model for Hodgkin–Huxley Neuron Employing FGMOS Transistors

2018 ◽  
Vol 27 (09) ◽  
pp. 1850141
Author(s):  
Ava Salmanpour ◽  
Ebrahim Farshidi ◽  
Karim Ansari Asl
Keyword(s):  
Analog Circuit ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Circuit Model ◽  
Weak Inversion ◽  
Combined Action ◽  
Low Costs ◽  
Low Supply Voltage ◽  
Channel Currents

A low voltage analog VLSI circuit model for Hodgkin–Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used to model HH equations such as gating variables, [Formula: see text] and [Formula: see text] functions and combined action of [Formula: see text], [Formula: see text] and [Formula: see text]. The combination of [Formula: see text], [Formula: see text] and [Formula: see text] controls the Na[Formula: see text] and K[Formula: see text] channel currents. The superiorities of the proposed circuits are low supply voltage, low power consumption, less circuit complexity and as a result, low costs are compared to the previous works. The proposed circuit which uses 24 transistors is simulated in Hspice software using 0.18[Formula: see text] technology and consumes 119[Formula: see text][Formula: see text]W.

Simple low-voltage weak inversion MOS 1/x circuit

1994 ◽  
Vol 30 (20) ◽  
pp. 1639-1640 ◽  
Author(s):  
M. van de Gevel ◽  
J.C. Kuenen
Keyword(s):  
Low Voltage ◽  
Weak Inversion

Low-voltage log-domain signal processing in CMOS and BiCMOS

1999 ◽  
Vol 46 (3) ◽  
pp. 279-289 ◽  
Author(s):  
C. Enz ◽  
M. Punzenberger ◽  
D. Python
Keyword(s):  
Signal Processing ◽  
Low Voltage ◽  
Log Domain
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