Time-Resolved Luminescence Studies of Vertical Transport in Short-Period Superlattices with Enlarged Well

1990 ◽  
pp. 224-227 ◽  
Author(s):  
J. Puls ◽  
F. Henneberger ◽  
I. N. Uraltsev ◽  
A. M. Vasiliev ◽  
U. Woggon ◽  
...  
Keyword(s):  
Vertical Transport ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

2019 ◽  
Vol 125 (18) ◽  
pp. 185705 ◽  
Author(s):  
Felix Mahler ◽  
Jens W. Tomm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Veit Hoffmann ◽  
...  
Keyword(s):  
Structural Stability ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Time Resolved Photoluminescence

Picosecond luminescence studies of vertical transport in short-period superlattices

1991 ◽  
Vol 9 (4) ◽  
pp. 503-506 ◽  
Author(s):  
J. Puls ◽  
F. Henneberger ◽  
I.N. Uraltsev ◽  
A.M. Vasiliev
Keyword(s):  
Vertical Transport ◽  
Short Period ◽  
Short Period Superlattices

Purcell effect apparent in vertical transport in short-period superlattices

2012 ◽  
Author(s):  
I. V. Altukhov ◽  
A. N. Baranov ◽  
N. D. Il'inskaya ◽  
M. S. Kagan ◽  
S. V. Khazanova ◽  
...  
Keyword(s):  
Vertical Transport ◽  
Purcell Effect ◽  
Short Period ◽  
Short Period Superlattices

Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells

2007 ◽  
Vol 244 (8) ◽  
pp. 2926-2935 ◽  
Author(s):  
K. Fujiwara ◽  
A. Satake ◽  
L. Schrottke ◽  
R. Hey ◽  
H. T. Grahn
Keyword(s):  
Quantum Wells ◽  
Vertical Transport ◽  
Carrier Trapping ◽  
Short Period ◽  
Short Period Superlattices

Time resolved photoluminescence studies of perpendicular transport in CdTe/Cd1−xMnxTe short‐period superlattices

1993 ◽  
Vol 74 (8) ◽  
pp. 5272-5274 ◽  
Author(s):  
R. Hellmann ◽  
A. Pohlmann ◽  
E. O. Göbel ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  
Keyword(s):  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Blue-green lasers based on short-period superlattices in II-VI compounds

1999 ◽  
Vol 169 (4) ◽  
pp. 468 ◽  
Author(s):  
S.V. Ivanov ◽  
Petr S. Kop'ev ◽  
A.A. Toropov
Keyword(s):  
Short Period ◽  
Short Period Superlattices

scholarly journals The Band-Gap Studies of Short-Period CdO/MgO Superlattices

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ewa Przeździecka ◽  
P. Strąk ◽  
A. Wierzbicka ◽  
A. Adhikari ◽  
A. Lysak ◽  
...  
Keyword(s):  
Band Gap ◽  
Layer Thickness ◽  
Energy Gap ◽  
Band Gaps ◽  
Short Period ◽  
Wide Range ◽  
Salt Structure ◽  
Short Period Superlattices ◽  
Direct Band ◽  
Sublayer Thickness

AbstractTrends in the behavior of band gaps in short-period superlattices (SLs) composed of CdO and MgO layers were analyzed experimentally and theoretically for several thicknesses of CdO sublayers. The optical properties of the SLs were investigated by means of transmittance measurements at room temperature in the wavelength range 200–700 nm. The direct band gap of {CdO/MgO} SLs were tuned from 2.6 to 6 eV by varying the thickness of CdO from 1 to 12 monolayers while maintaining the same MgO layer thickness of 4 monolayers. Obtained values of direct and indirect band gaps are higher than those theoretically calculated by an ab initio method, but follow the same trend. X-ray measurements confirmed the presence of a rock salt structure in the SLs. Two oriented structures (111 and 100) grown on c- and r-oriented sapphire substrates were obtained. The measured lattice parameters increase with CdO layer thickness, and the experimental data are in agreement with the calculated results. This new kind of SL structure may be suitable for use in visible, UV and deep UV optoelectronics, especially because the energy gap can be precisely controlled over a wide range by modulating the sublayer thickness in the superlattices.

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