In-Situ Processing and Selective Area Epitaxy

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

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In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask

Journal of Crystal Growth ◽

10.1016/0022-0248(91)91041-8 ◽

1991 ◽

Vol 111 (1-4) ◽

pp. 570-573 ◽

Cited By ~ 10

Author(s):

Y. Hiratani ◽

Y. Ohki ◽

Y. Sugimoto ◽

K. Akita

Keyword(s):

Oxide Layer ◽

Selective Area Epitaxy ◽

Selective Area

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In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.01.066 ◽

2005 ◽

Vol 277 (1-4) ◽

pp. 97-103 ◽

Cited By ~ 1

Author(s):

S. Birudavolu ◽

S.Q. Luong ◽

N. Nuntawong ◽

Y.C. Xin ◽

C.P. Hains ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Selective Area Epitaxy ◽

Selective Area ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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In-situ maskless selective area epitaxy of GaAs using a low-energy Ga focused ion beam

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90518-5 ◽

1994 ◽

Vol 140 (1-2) ◽

pp. 244-247 ◽

Cited By ~ 20

Author(s):

Kangsa Pak ◽

Isao Saitoh ◽

Naoki Ohshima ◽

Hiroo Yonezu

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Low Energy ◽

Selective Area Epitaxy ◽

Selective Area

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Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-421-15 ◽

1996 ◽

Vol 421 ◽

Cited By ~ 1

Author(s):

N. Y. Li ◽

C. W. Tu

Keyword(s):

Heterojunction Bipolar Transistor ◽

Device Performance ◽

Chemical Beam Epitaxy ◽

Alternative Source ◽

Group V ◽

Selective Area Epitaxy ◽

Carbon Doped ◽

Selective Area ◽

Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

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