Tunable Wavelength Selective Semiconductor Laser Systems

1986 ◽  
pp. 93-96
Author(s):  
K. J. Ebeling ◽  
W. Haessler ◽  
H. Fouckhardt ◽  
M. Port
Keyword(s):  
Semiconductor Laser ◽  
Laser Systems ◽  
Tunable Wavelength

scholarly journals Integrated dual-wavelength semiconductor laser systems for millimeter wave generation

2012 ◽  
Author(s):  
A. Corradi ◽  
G. Carpintero ◽  
B. W. Tilma ◽  
M. K. Smit ◽  
E. A. J. M. Bente
Keyword(s):  
Semiconductor Laser ◽  
Millimeter Wave ◽  
Wave Generation ◽  
Dual Wavelength ◽  
Laser Systems

Research progresses of optical chaos in semiconductor laser systems

2021 ◽  
Vol 0 (0) ◽  
pp. 1-12
Author(s):  
KUANG Shang-qi ◽  
◽  
◽  
GUO Xiang-shuai ◽  
FENG Yu-ling ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Optical Chaos ◽  
Laser Systems

Surgery of benign and tumor-like laryngeal formations using 445 nm semiconductor laser

2021 ◽  
Vol 20 (6) ◽  
pp. 102-108
Author(s):  
A. A. Krivopalov ◽  
◽  
P. A. Shamkina ◽  
Yu. E. Stepanova ◽  
E. E. Koren’ ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Clinical Case ◽  
Anterior Commissure ◽  
Voice Quality ◽  
Laser Coagulation ◽  
Ktp Laser ◽  
Upper Respiratory Tract ◽  
Surgical Interventions ◽  
Relevant Today ◽  
Laser Systems

The issues of phonosurgery remain truly relevant today since there is a high prevalence of benign and tumor-like laryngeal formations among the pathology of the upper respiratory tract (up to 55–70%). Nowadays, laser technologies are coming to the fore among the possibilities of laryngological practice. Photoangiolytic lasers, such as the KTP laser, are actively used to coagulate subepithelial vessels without destroying the superficial epithelium. A novelty among laser systems is a laser with a wavelength of 445 nm certified in 2018, which combines high hemostatic and cutting effects without the extensive zone of thermal damage to surrounding tissues. This paper presents two clinical cases where a 445 nm laser is used. The first clinical case describes a patient with an anterior commissure scar after previous surgical interventions. Treatment using a 445 nm laser made it possible to dissect the scar and restore the normal laryngeal anatomy without stent placement. 5 weeks after the operation, the patient underwent phonopedic therapy and was satisfied with the voice quality. The second clinical case describes a patient with a cystic-like neoplasm of the left vocal fold. Dissection and enucleation of the formation using a direct micro laryngoscopy was done, followed by laser coagulation of the incision edges. Within 2 weeks, the patient showed restoration of the laryngeal endoscopic state and a voice improvement with normalization of acoustic parameters. Thus, the 445 nm semiconductor laser has shown in practice highly pronounced photoangiolytic and cutting properties, which proves its effectiveness in phonosurgery.

Analysis of Time-Delay Characteristic and Effective Bandwidth of Three Chaotic Semiconductor Laser Systems

2020 ◽  
Vol 57 (13) ◽  
pp. 131407
Author(s):  
刘蓬勃 Liu Pengbo ◽  
张胜海 Zhang Shenghai ◽  
张晓旭 Zhang Xiaoxu ◽  
吴天安 Wu Tianan
Keyword(s):  
Time Delay ◽  
Semiconductor Laser ◽  
Effective Bandwidth ◽  
Laser Systems

Fourier-transform-limited 2.5 ps light pulses with electrically tunable wavelength (15 nm) by hybridly modelocking a semiconductor laser in a chirped Bragg grating fibre external cavity

1995 ◽  
Vol 31 (23) ◽  
pp. 2008-2009 ◽  
Author(s):  
J. Yu ◽  
D. Huhse ◽  
D. Bimberg ◽  
M. Schell ◽  
J.A.R. Williams ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Semiconductor Laser ◽  
External Cavity ◽  
Bragg Grating ◽  
Light Pulses ◽  
Tunable Wavelength

Coherent Semiconductor Laser Systems For Optical Intersatellite Links

1990 ◽  
Author(s):  
R. J. Somerset ◽  
G. D. Fletcher
Keyword(s):  
Semiconductor Laser ◽  
Laser Systems

Optimization of phase-locked arrays geometry for high brightness laser systems

2012 ◽  
Vol 20 (2) ◽  
Author(s):  
G. Sobczak ◽  
A. Maląg
Keyword(s):  
Semiconductor Laser ◽  
Operation Mode ◽  
Great Influence ◽  
Geometrical Parameters ◽  
Light Sources ◽  
Far Field ◽  
Laser Arrays ◽  
High Brightness ◽  
Interesting Candidate ◽  
Laser Systems

AbstractThe emitted beam far field (FF) distributions of phase-locked semiconductor laser arrays (PLA) made them an interesting candidate for high-brightness light sources. Variations of geometrical parameters of PLA have great influence on their far-field characteristics. This paper presents a review of FF distribution variations induced by such parameters as width and number of active stripes as well as stripe spacing. We also present a description of predicting an operation mode of designed PLA and some limitations in designed geometry of high-brightness PLA are shown as well.

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