Nutritional and engineering aspects of microbial process development

2007 ◽  
pp. 291-328 ◽  
Author(s):  
Prakash S. Masurekar
Keyword(s):  
Process Development ◽  
Microbial Process

Parallel-operated stirred-columns for microbial process development

2002 ◽  
Vol 11 (1) ◽  
pp. 69-72 ◽  
Author(s):  
Dirk Weuster-Botz ◽  
Susanne Stevens ◽  
Alexander Hawrylenko
Keyword(s):  
Process Development ◽  
Microbial Process

Evaluation of parallel operated small-scale bubble columns for microbial process development using Staphylococcus carnosus

2001 ◽  
Vol 88 (1) ◽  
pp. 77-84 ◽  
Author(s):  
S. Dilsen ◽  
W. Paul ◽  
D. Herforth ◽  
A. Sandgathe ◽  
J. Altenbach-Rehm ◽  
...  
Keyword(s):  
Process Development ◽  
Bubble Columns ◽  
Small Scale ◽  
Microbial Process ◽  
Staphylococcus Carnosus

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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