Study on the Influence of Introducing Al Transition Layer on Deuterium Resistance of Al2O3 Coating

The Al/Al2O3 composite deuterium barrier was deposited on the polished side of 316 L stainless steel by the method of radio-frequency magnetron sputtering. The influence of the introduction of Al transition layer on the deuterium resistance performance of Al2O3 ceramic coating was studied. The field emission scanning electron microscope (SEM), the grazing incident X-ray diffraction technique (GIXRD), and the auger electron spectroscopy (AES) were used to analyze the microscopic morphology, phase, and element distribution in the depth direction of the Al/Al2O3 coating, and the gas-driver permeation method was used to measure the deuterium permeation behavior of the coating sample. The results show that Al2O3 is amorphous after annealing at 873 K. Due to the oxidation of the Al transition layer, the connection between the coating and the substrate is tightly connected. Under the combined action of permeation temperature and pressure of 873 K and 80 kPa, the deuterium permeability of Al/Al2O3 coating is 6.35 × 10 − 14 mol·m-1·s-1·Pa-0.5, which shows that the Al/Al2O3 coating has excellent deuterium permeation resistance. Furthermore, deuterium permeability of the Al/Al2O3 coating was diminished by about 2 orders of magnitude compared with 316 L stainless steel, and it is reduced 2~3 times compared with the single Al2O3 coating sample. The study indicates that the introduction of the Al transition layer can significantly enhance the barrier effect of the Al/Al2O3 coating sample.

Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

In this paper, the effect of inert gas plasma to the morphology of 0.29μm thick 3C-SiC/Si is studied. Helium was used for the plasma treatment and its effect as the etchant gas to the polished side of 3C-SiC/Si surface was determined. The changes of the surface morphology were monitored using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From the results obtained, it has shown that the morphology of surface properties of 3C-SiC was modified by differences in helium plasma time of exposure and the degree of roughness of the surface changes. The results show by the SEM and AFM shown that plasma treatment had been successfully implemented for the 0.29μm thick 3C-SiC/Si.

Applied Stress on Silicon Perfect Single Crystal for Controlling the Extinction Layer

The extinct layer of Si(311) perfect single crystal has been investigated by neutron diffraction method with the residual stress diffractometer DN1-M installed at the experimental hall of Indonesian multipurpose reactor RSG-GAS, in Serpong, which provides micro beam and point detector arrangement. A Si(311) perfect single crystal with thickness of 5mm was used in this experiment. The crystal was finely polished at one side and roughly polished at the opposite one. It was measured that diffracted beam from the finely polished side shows very low intensity with narrow peak profile, while for the roughly polished surface, shows stronger and broaden peak. The diffraction layer of rough surface was determined to be 0.36mm, while the smooth one was 0.28mm. It was also found that in the direction of crystal thickness in between layers no diffraction peak was detected. By these experiments it was confirmed that the applied stress on Si(311) perfect single crystal produced thicker diffraction layer. This technique is one that can be used in order to enhance the total diffracted neutron, which is desired to produce a good monochromator system.

BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy

A new method of preparation will be shown which allows traditional fixturing such as test heads and probe stations to be utilized in a normal test mode. No inverted boards cabled to a tester are needed since the die remains in its original package and is polished and rebonded to a new package carrier with the polished side facing upward. A simple pin reassignment is all that is needed to correct the reverse wire sequence after wire to wire bonding or wire to frame bonding in the new package frame. The resulting orientation eliminates many of the problems of backside microscopy since the resulting package orientation is now frontside. The low profile as a result of this technique allows short working distance objectives such as immersion lenses to be used across the die surface. Test equipment can be used in conjunction with analytical tools such as the emission microscope or focused ion beam due to the upright orientation of the polished backside silicon. The relationship between silicon thickness and transmission for various wavelengths of light will be shown. This preparation technique is applicable to advanced packaging methods and has the potential to become part of future assembly processes.

Cross-Section TEM Study On Kr+ Irradiation-Induced Amorphization in Quartz

Radiation damage in quartz has been of interest to the semiconductor industry, optical fiber industry, and nuclear industry. Cross-section transmission electron microscopy (TEM) is a powerful tool for investigating the irradiation effects since it provides a direct measurement of the ion and the damage distributions, and can also provide detailed microstructural information such as the presence of amorphous regions and the size, density and chemical nature of defect aggregates. The results reported below are from a systematic cross-section TEM study on 1.5 MeV Kr+ ion irradiated quartz.3-mm discs of quartz (along 010 face) were prepared with 100 μm in thickness. One side for each discs was well polished using a 0.05 μm diamond paste. The well-polished side was irradiated at room temperature with 1.5 MeV Kr ions in the HVEM-Tandem Facility at Argonne National Laboratory. Following irradiation, cross-section TEM specimens were prepared using the so-called T-tool technique, a modified tripot technique

Advanced TEM sample preparation techniques for submicron Si devices

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.