Ferroelectrics onto Substrates Prepared by Chemical Solution Deposition: From the Thin Film to the Self-Assembled Nano-sized Structures

2011 ◽  
pp. 93-144
Author(s):  
M. M. Calzada
Keyword(s):  
Thin Film ◽  
Chemical Solution Deposition ◽  
The Self ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Self Assembled

Chemical solution deposition of YBCO thin film by different polymer additives

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1563-1566 ◽  
Author(s):  
W.T. Wang ◽  
G. Li ◽  
M.H. Pu ◽  
R.P. Sun ◽  
H.M. Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Solution Deposition ◽  
Polymer Additives ◽  
Chemical Solution ◽  
Ybco Thin Film ◽  
Solution Deposition

scholarly journals Effect of annealing atmosphere on LiMn2O4 for thin film Li-ion batteries from aqueous chemical solution deposition

2016 ◽  
Vol 4 (47) ◽  
pp. 18457-18469 ◽  
Author(s):  
G. Maino ◽  
J. D'Haen ◽  
F. Mattelaer ◽  
C. Detavernier ◽  
A. Hardy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Atmosphere ◽  
Li Ion Batteries ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Current Collectors ◽  
Li Ion

Aqueous CSD provides LMO thin films at low T in a N2 ambient, eliminating issues with stacking and sensitive current collectors.

Chemical-Solution Deposition of Hafnia Films on Self-Assembled Molecular Monolayers

2006 ◽  
Vol 2 (1) ◽  
pp. 13-32 ◽  
Author(s):  
Michael Hu ◽  
Amy DeBaillie ◽  
Yayi Wei ◽  
Gerold Jellison
Keyword(s):  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Molecular Monolayers ◽  
Self Assembled

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

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