Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

The Effect of Photoconductive Mole Fraction Based on Thin Film BaxSr1-xTiO3 (x = 0.000; 0.125; 0.250; 0.375; 0.500) on Electrical Properties and Diffusivity Coefficient

Barium Strontium Titanate (BaxSr1-xTiO3) thin films have been fabricated for mole fraction (x= 0.000; 0.125; 0.250; 0.375; 0.500) on p-type silicon (100) substrate using Chemical Solution Deposition (CSD) method and spin coating technique. The film annealed at 850 ∘C for 8 hours with an increasing rate of 1.67 ∘C/minute. The BST thin film was characterized using an LCR meter that the film is given a different light intensity (0 lux, 4000 lux, 8000 lux). Data obtained from the LCR meter is conductance, capacitance, and impedance. Different mole fractions on Barium produce different electrical properties that show the value of electric conductivity, dielectric constant, impedance, and diffusion coefficient.

Study on the Flexoelectricity of BST Film Multilayer Structure

Single layer and bilayer Y3+-doped Ba0.65Sr0.35TiO3 (BST) thin-film cantilever beam, of which the single BST film thickness is 500 nm, was prepared on a composite silicon substrate. The flexoelectric coefficients of both types of BSTs were measured using a low frequency vibration method. The flexoelectric coefficient of the bilayer BST film multilayer structure is 1.66 μC/m, which doubles the effective flexoelectric coefficient comparing to the single layer BST. In addition, we discussed the effective piezoelectric coefficient of the BST film multilayer structure, which can reach as much as 2.08×10-10C/N due to the scaling effect.

The Mole Fraction Effect on Magnetic Properties of BaxSr1-xTiO3 (x = 0; 0.125; 0.25; 0.375; 0.500) Thin Film

Barium Strontium Titanate (BaxSr1-xTiO3) thin films have been synthesized for mole fraction = 0; 0.125; 0.25; 0.375; and 0.500 using Chemical Solution Deposition (CSD) method. The thin film was grown on p-type silicon (100) substrate using spin coating technique and annealed at 850 ∘C for 8 hours with an increasing rate of 1.67 ∘C/minute. The BST thin film was characterized using LCR meter to obtain data on frequency, charge, and electrical current. We also model the occurrence of vicinity magnetic induction around the thin film produced by the current flow in the BST thin film. The electrical and magnetic induction response of BST thin film with variation of mole fraction are presented here.

THE DETERMINATION OF BARIUM STRONTIUM TITANATE THIN FILM BAND GAP ENERGY Ba0,15Sr0,85TiO3 USING ULTRAVIOLET-VISIBLE SPECTROSCOPY

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC. Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.