Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

Surface Electronic Properties of Ionimplanted Laser-Annealed Si(111)

1981 ◽  
Vol 4 ◽  
Author(s):  
D.E. Eastman ◽  
P. Heimann ◽  
F.J. Himpsel ◽  
B. Reihl ◽  
D.M. Zehner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Fermi Level ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Momentum Space ◽  
Laser Annealing ◽  
Surface States ◽  
P Type

ABSTRACTHighly-degenerate As-doped n-type and B-doped p-type Si(l11)−(1×1) surfaces have been prepared via ion implantation and laser annealing and studied using photoemission. For As concentrations of ∼4–7%, surface states become very different from those for intrinsic Si(l11)−(1×1) and the Fermi level EF at the surface moves to the conduction band minima resulting in a zero height n-type Schottky barrier. Emission from the conduction band minima has been directly viewed in momentum space.

The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

1986 ◽  
Vol 71 ◽  
Author(s):  
H.B. Harrison ◽  
Y.H. Li ◽  
G.A. Sai-Halasz ◽  
S. Iyer
Keyword(s):  
Ion Implantation ◽  
Comparative Study ◽  
Electrical Activation ◽  
Shallow Junction ◽  
Type Silicon ◽  
Thermally Processed ◽  
Long Time ◽  
P Type ◽  
Ion Implanted

AbstractThis paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well

2012 ◽  
Vol 717-720 ◽  
pp. 781-784 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Miwako Iijima ◽  
Takahiro Nagano ◽  
Kenji Fukuda ◽  
Hajime Okumura
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Impurity Concentration ◽  
Single Shot ◽  
Type Ii ◽  
Type Region ◽  
Channel Mobility ◽  
P Type ◽  
Channel Properties ◽  
Ion Implanted

Fabricated were 4H-SiC p-channel MOSFETs in two types of ion-implanted n-well regions and in the n-type substrate as a control. Effects of the n-well structure on the electrical properties were investigated. P-channel MOSFETs fabricated in the uniform doped n-well by using multiple ion-implantations showed inferior on-state characteristics to that of the control MOSFET, while those fabricated in the retrograde n-wells by using single-shot ion-implantation without additional implantation to form the surface p-type region indicated improved channel properties. The Vth values were controlled by the impurity concentration and depth of the surface p-type region, and the values of channel mobility were nearly equal to that of the control MOSFET. Good sub-threshold characteristics for the type II devices were demonstrated.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

scholarly journals Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽  
2019 ◽  
Vol 9 (35) ◽  
pp. 20375-20384 ◽  
Author(s):  
Navdeep Kaur ◽  
Aman Mahajan ◽  
Viplove Bhullar ◽  
Davinder Paul Singh ◽  
Vibha Saxena ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Dye Sensitized Solar Cells ◽  
Implantation Technique ◽  
Dye Sensitized ◽  
Stability Issue ◽  
The Stability ◽  
Sensitized Solar Cells ◽  
Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

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