Discontinuous Grain Growth and the Grain Boundary in a Solid-Solid Reaction Growth Method for Ferrite Single Crystals

In magnetically anisotropic materials a driving force for grain boundary migration can be induced by an external magnetic ¯eld. It is experimentally shown that annealing of locally deformed Zn single crystals in a suitably directed high magnetic ¯eld results in a growth of new individual grains. Velocities of some solitary moving grain boundaries were measured and their absolute mobilities were estimated at a single temperature. Results are discussed in terms of preferential grain orientation and boundary character.

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Preparation of BaTiO3 single crystals using the modified SiO2-exaggerated grain growth method

Journal of the European Ceramic Society ◽

10.1016/s0955-2219(01)00336-3 ◽

2002 ◽

Vol 22 (5) ◽

pp. 681-688 ◽

Cited By ~ 23

Author(s):

J Muñoz Saldaña ◽

B Mullier ◽

G.A Schneider

Keyword(s):

Single Crystals ◽

Grain Growth ◽

Growth Method

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Fabrication of PMN-PT Single Crystals by Using the Exaggerated Grain Growth Method

10.21236/ada398431 ◽

2001 ◽

Author(s):

Doh-Yeon Kim ◽

N. M. Hwang ◽

Ho-Yong Lee ◽

D. Y. Yoon ◽

S. J. Kang

Keyword(s):

Single Crystals ◽

Grain Growth ◽

Growth Method

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Growth of (Na0.5K0.5)NbO3 single crystals by abnormal grain growth method from special shaped nano-powders

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2010.01.008 ◽

2010 ◽

Vol 30 (7) ◽

pp. 1725-1730 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Yu-Dong Hou ◽

Hai-Yan Ge ◽

Man-Kang Zhu ◽

Hui Yan

Keyword(s):

Single Crystals ◽

Grain Growth ◽

Abnormal Grain Growth ◽

Growth Method

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Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

ISIJ International ◽

10.2355/isijinternational.43.245 ◽

2003 ◽

Vol 43 (2) ◽

pp. 245-250 ◽

Cited By ~ 9

Author(s):

Jeong Sik Choi ◽

Duk Yong Yoon

Keyword(s):

Grain Boundary ◽

Temperature Dependence ◽

Grain Growth ◽

Boundary Structure ◽

Bulk Silicon ◽

Silicon Iron ◽

Grain Boundary Structure

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Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽

10.3390/cryst11030235 ◽

2021 ◽

Vol 11 (3) ◽

pp. 235

Author(s):

Shuqi Zhao ◽

Tongtong Yu ◽

Ziming Wang ◽

Shilei Wang ◽

Limei Wei ◽

...

Keyword(s):

Raman Spectroscopy ◽

Single Crystals ◽

High Performance ◽

Group Iv ◽

X Ray Diffraction ◽

High Quality ◽

Practical Applications ◽

Large Size ◽

Growth Method ◽

Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

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