Epitaxial Growth of SiC Single Crystal Films

1991 ◽  
pp. 45-75 ◽  
Author(s):  
Yoshiharu Nakajima
1997 ◽  
Vol 172 (3-4) ◽  
pp. 396-403 ◽  
Author(s):  
S.V. Shiryaev ◽  
S.N. Barilo ◽  
N.S. Orlova ◽  
D.I. Zhigunov ◽  
A.S. Shestac ◽  
...  

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.


2002 ◽  
Vol 234 (2-3) ◽  
pp. 447-453 ◽  
Author(s):  
C. Dufour ◽  
K. Dumesnil ◽  
S. Soriano ◽  
D. Pierre ◽  
Ch. Senet ◽  
...  

1970 ◽  
Vol 41 (2) ◽  
pp. 825-825 ◽  
Author(s):  
Vera Caslavska ◽  
Rustum Roy

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