Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering

1989 ◽  
Vol 24 (1) ◽  
pp. 187-191 ◽  
Author(s):  
T. Suzuki ◽  
T. Yamazaki ◽  
M. Takizawa ◽  
O. Kawasaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Ion Beam ◽  
Thickness Dependence ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Study of the electrical properties of Ion Beam Sputtered thin AlNiCo films

2007 ◽  
Vol 4 (2) ◽  
pp. 260-262
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Glass Substrates ◽  
Beam Sputtering

The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum

scholarly journals Structural, Mechanical and Electrical Properties of Sputter Coated Copper Thin Films on Poly Ethylene Terephthalate 

2021 ◽  
Author(s):  
A. Atta ◽  
E. Abdeltwab ◽  
Alpan Bek
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Adhesion Force ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Force Microscopy ◽  
Mechanical And Electrical Properties ◽  
Poly Ethylene Terephthalate ◽  
Beam Sputtering ◽  
Poly Ethylene

Abstract Copper (Cu) thin films are deposited on polyethyleneterephthalate (PET) substrate using ion-beam-sputtering technique. The formation of Cu thin films is successful confirmed as investigated by X-ray diffraction (XRD). Surface morphology of Cu/PET is studied by atomic force microscopy (AFM). The AFM results show that Cu film dewets PET surface and the surface roughness increased from 22.6 nm for PET to 45.3 nm after 40min of deposited Cu/PET. The sheet resistance decreases from 5.16x104Ω to 1.3x104Ω and resistivity decreases from 2.3x10-2Ω.cm to 1.77x10-2Ω.cm, as the Cu deposition time increases from 20min to 60min. The Young’s modulus increases from 2.82GPa to 2.96GPa and the adhesion force enhanced from 14.7nN to 29.90nN after 40min of Cu deposition. The DC electrical conductivity at 300V is improved from 1.75x10-8 S.cm-1 to 3.57x10-8 S.cm-1 after 60min of Cu deposition. The results show that ion beam deposition of Cu on flexible PET platform clearly exhibits improvement over pristine PET in the mechanical and electrical properties which renders it useful for electronics applications.

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO3 THIN FILMS PRODUCED BY ION BEAM SPUTTERING

2008 ◽  
Vol 100 (1) ◽  
pp. 228-237 ◽  
Author(s):  
F. JOMNI ◽  
H. OUAJJI ◽  
A. SYLVESTRE ◽  
J. GUILLAN ◽  
E. DEFAŸ ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Properties of indium oxide/tin oxide multilayered films prepared by ion-beam sputtering

1988 ◽  
Vol 23 (8) ◽  
pp. 3026-3030 ◽  
Author(s):  
Takeyuki Suzuki ◽  
Tsutomu Yamazaki ◽  
Harunobu Oda
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Multilayered Films ◽  
Beam Sputtering
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