Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon

ABSTRACTYttria stabilized zirconia (YSZ) films have been characterized. The refractive index measured by ellipsometry is about 2.1. The breakdown electric field is greater than 4MV/cm for small area capacitors with a decrease for large area capacitors. This dielectric strength is weakly dependent on the film thickness within the range 0.2-1.lμm. The analysis of the 1MHz C(V) curves by the Terman method leads to a density of interface states of the order of 1012cm−2eV−1 in the middle of the bandgap with an increase near the conduction and the valence bands. The sensitivity of zirconia to the irradiations has been characterized by analysing 1MHz C(V). With or without electric field applied during the irradiations, the Flat-Band voltage shifts are lower for YSZ films than for thermal silicon dioxide films (2 times smaller).

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Growth of Epitaxial KNbO3 Thin Films

MRS Proceedings ◽

10.1557/proc-341-265 ◽

1994 ◽

Vol 341 ◽

Cited By ~ 4

Author(s):

Thomas M. Graettinger ◽

P. A. Morris ◽

A. Roshko ◽

A. I. Kingon ◽

O. Auciello ◽

...

Keyword(s):

Thin Films ◽

Frequency Conversion ◽

Lattice Mismatch ◽

Ion Beam ◽

Growth Conditions ◽

Infrared Light ◽

Epitaxial Thin Films ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Ion Assistance

AbstractKNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency conversion of infrared light into the visible wavelength range using integrated optical devices. While epitaxial thin films of KNbO3 have previously been grown using ion beam sputtering, defects (i.e. grain boundaries, domains, surface roughness) in these films resulted in high optical losses and no measurable in-plane birefringence. Previous films were grown on MgO substrates, which have a >4% lattice mismatch with KNbO3. In the work reported here, we have grown films on MgO, MgA12O4, NdGaO3, and KTaO3 to investigate the role of lattice mismatch on the resulting film quality. Films have also been grown with and without oxygen ion assistance. The orientations, morphologies, and defects in the films were examined using x-ray diffraction and AFM to determine their relationships to the growth conditions and substrate lattice mismatch.

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Microstructure and electrical properties of Ni–Cr thin films fabricated by ion beam sputtering

Materials Science and Technology ◽

10.1179/174328407x161079 ◽

2007 ◽

Vol 23 (9) ◽

pp. 1054-1058

Author(s):

J. C. Zhou ◽

L. Tian ◽

J. W. Yan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Study of the electrical properties of Ion Beam Sputtered thin AlNiCo films

Baghdad Science Journal ◽

10.21123/bsj.4.2.260-262 ◽

2007 ◽

Vol 4 (2) ◽

pp. 260-262

Author(s):

Baghdad Science Journal

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Glass Substrates ◽

Beam Sputtering

The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum

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Structural, Mechanical and Electrical Properties of Sputter Coated Copper Thin Films on Poly Ethylene Terephthalate

10.21203/rs.3.rs-220271/v1 ◽

2021 ◽

Author(s):

A. Atta ◽

E. Abdeltwab ◽

Alpan Bek

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Adhesion Force ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Force Microscopy ◽

Mechanical And Electrical Properties ◽

Poly Ethylene Terephthalate ◽

Beam Sputtering ◽

Poly Ethylene

Abstract Copper (Cu) thin films are deposited on polyethyleneterephthalate (PET) substrate using ion-beam-sputtering technique. The formation of Cu thin films is successful confirmed as investigated by X-ray diffraction (XRD). Surface morphology of Cu/PET is studied by atomic force microscopy (AFM). The AFM results show that Cu film dewets PET surface and the surface roughness increased from 22.6 nm for PET to 45.3 nm after 40min of deposited Cu/PET. The sheet resistance decreases from 5.16x104Ω to 1.3x104Ω and resistivity decreases from 2.3x10-2Ω.cm to 1.77x10-2Ω.cm, as the Cu deposition time increases from 20min to 60min. The Young’s modulus increases from 2.82GPa to 2.96GPa and the adhesion force enhanced from 14.7nN to 29.90nN after 40min of Cu deposition. The DC electrical conductivity at 300V is improved from 1.75x10-8 S.cm-1 to 3.57x10-8 S.cm-1 after 60min of Cu deposition. The results show that ion beam deposition of Cu on flexible PET platform clearly exhibits improvement over pristine PET in the mechanical and electrical properties which renders it useful for electronics applications.

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