Measurement of the surface recombination rate and lifetime of charge carriers in semiconductors by a contactless microwave resonator method

1983 ◽  
Vol 26 (6) ◽  
pp. 569-574
Author(s):  
V. B. Akhmanaev ◽  
Yu. V. Lisyuk ◽  
Yu. V. Medvedev ◽  
A. S. Petrov
Keyword(s):  
Recombination Rate ◽  
Surface Recombination ◽  
Charge Carriers ◽  
Microwave Resonator ◽  
Surface Recombination Rate ◽  
Resonator Method ◽  
Microwave Resonator Method

scholarly journals О рекомбинационных процессах в пленках CdS-PbS

2018 ◽  
Vol 52 (8) ◽  
pp. 853
Author(s):  
А.Г. Роках ◽  
М.И. Шишкин ◽  
В.С. Аткин
Keyword(s):  
Recombination Rate ◽  
Room Temperature ◽  
Surface Recombination ◽  
Active Surface ◽  
Charge Carriers ◽  
Narrow Gap ◽  
Surface Recombination Rate ◽  
Gap Phase

AbstractThe transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)_0.9–(PbS)_0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

2016 ◽  
Vol 63 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Andrea Kraxner ◽  
Frederic Roger ◽  
Bernhard Loeffler ◽  
Martin Faccinelli ◽  
Evelin Fisslthaler ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Semiconductor Devices ◽  
Surface Recombination ◽  
Surface Recombination Rate ◽  
Tcad Simulation
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