Dependence of the current gain on the surface-recombination rate in a drift-free transistor

1969 ◽  
Vol 12 (2) ◽  
pp. 169-172
Author(s):  
B. K. Petrov ◽  
V. F. Synorov
Keyword(s):  
Recombination Rate ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Rate

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

2016 ◽  
Vol 63 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Andrea Kraxner ◽  
Frederic Roger ◽  
Bernhard Loeffler ◽  
Martin Faccinelli ◽  
Evelin Fisslthaler ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Semiconductor Devices ◽  
Surface Recombination ◽  
Surface Recombination Rate ◽  
Tcad Simulation

scholarly journals О рекомбинационных процессах в пленках CdS-PbS

2018 ◽  
Vol 52 (8) ◽  
pp. 853
Author(s):  
А.Г. Роках ◽  
М.И. Шишкин ◽  
В.С. Аткин
Keyword(s):  
Recombination Rate ◽  
Room Temperature ◽  
Surface Recombination ◽  
Active Surface ◽  
Charge Carriers ◽  
Narrow Gap ◽  
Surface Recombination Rate ◽  
Gap Phase

AbstractThe transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)_0.9–(PbS)_0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

Diagnostics of Recombination Rate Homogeneity in Structures of Large-Area Solar Cells

2004 ◽  
Vol 97-98 ◽  
pp. 139-144
Author(s):  
Vitezslav Benda
Keyword(s):  
Solar Cells ◽  
Recombination Rate ◽  
Monochromatic Light ◽  
Surface Recombination ◽  
Antireflection Coating ◽  
Open Circuit ◽  
Large Area ◽  
Surface Recombination Rate ◽  
Local Defects ◽  
Efficiency And Reliability

The paper refers about a possibility to check recombination rate distribution over the area of power (large-area) solar cells from measured values of open circuit voltage VOC using local irradiation by monochromatic light of different wavelengths (LBIV . Light Beam Initiated Voltage). The method can give information both about recombination centres distribution in large-area solar cells and surface recombination rate at the antireflection coating. From VOC distribution, also position and extent of local defects can also be determined. The method can be used to investigate the influence of technology on characteristics of solar cells as an in-process checking with the aim of increasing efficiency and reliability of solar cells.

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