scholarly journals О рекомбинационных процессах в пленках CdS-PbS

2018 ◽  
Vol 52 (8) ◽  
pp. 853
Author(s):  
А.Г. Роках ◽  
М.И. Шишкин ◽  
В.С. Аткин
Keyword(s):  
Recombination Rate ◽  
Room Temperature ◽  
Surface Recombination ◽  
Active Surface ◽  
Charge Carriers ◽  
Narrow Gap ◽  
Surface Recombination Rate ◽  
Gap Phase

AbstractThe transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)_0.9–(PbS)_0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

2016 ◽  
Vol 63 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Andrea Kraxner ◽  
Frederic Roger ◽  
Bernhard Loeffler ◽  
Martin Faccinelli ◽  
Evelin Fisslthaler ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Semiconductor Devices ◽  
Surface Recombination ◽  
Surface Recombination Rate ◽  
Tcad Simulation

Infrared-Photovoltaic Responses of Ion-Beam Synthesized β-FeSi2/n-Si Heterojunctions

1999 ◽  
Vol 607 ◽  
Author(s):  
Yoshihito Maeda ◽  
Kenji Umezawa ◽  
Kiyoshi Miyake ◽  
Kenya Ohashi
Keyword(s):  
Room Temperature ◽  
Interband Transition ◽  
Ion Beam ◽  
Photovoltaic Cells ◽  
Threshold Energy ◽  
Surface Recombination ◽  
Wavelength Region ◽  
Pronounced Increase ◽  
Surface Recombination Rate ◽  
Trap Levels

AbstractPhotoresponses of photovoltaic cells using ion-beam synthesized (IBS) polycrystalline p+-β-FeSi2/n-Si heterojunctions were examined in an infrared (IR) wavelength region. At room temperature, an evident photoresponse due to an internal photoemission from trap levels in β-FeSi2 with the threshold energy Φ=0.62 eV was observed at 0.6-0.87 eV. The pronounced increase of a photoresponse corresponding mostly to an interband transition in β-FeSi2 was observed at 0.87-1.1 eV. The maximum dominated by a surface recombination process appeared around ∼1.2 eV. The surface recombination rate of ∼104 cm/s was estimated. The quantum efficiency was ∼60 % in the 0.8-1.0 µm wavelength region and ∼14 % around the band-gap of βFeSi2.

scholarly journals ELECTRON CARRIER-MEDIATED ROOM TEMPERATURE FERROMAGNETISM IN ANATASE (Ti,Co)O2

SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1230005 ◽  
Author(s):  
TOMOTERU FUKUMURA ◽  
YOSHINORI YAMADA ◽  
KAZUNORI UENO ◽  
HONGTAO YUAN ◽  
HIDEKAZU SHIMOTANI ◽  
...  
Keyword(s):  
Exchange Interaction ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Charge Carriers ◽  
Electric Field Effect ◽  
Chemical Doping ◽  
Principal Role ◽  
Fundamental Properties ◽  
Ferromagnetic Exchange

Since the discovery of room temperature ferromagnetism in ( Ti,Co ) O2 , the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like ( Ga,Mn ) As . Recent two studies on the control of ferromagnetism in anatase ( Ti,Co ) O2 at room temperature via electric field effect [Y. Yamada et al., Science332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett.99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase ( Ti,Co ) O2 and discuss the carrier mediated ferromagnetism.

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