Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions
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1990 ◽
Vol 48
(4)
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pp. 92-93
1986 ◽
Vol 47
(C8)
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pp. C8-1045-C8-1048
1986 ◽
1994 ◽
Vol 33
(Part 2, No. 2B)
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pp. L233-L234
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2008 ◽
Vol 266
(12-13)
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pp. 2834-2841
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