Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

2004 ◽  
Vol 78 (4) ◽  
pp. 607-610
Author(s):  
S. Kaschieva ◽  
S.N. Dmitriev ◽  
W. Skorupa
Keyword(s):  
Annealing Temperature ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mos Structures ◽  
Ion Implanted

Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

1989 ◽  
Vol 32 (3) ◽  
pp. 198-203
Author(s):  
A. N. Georgobiani ◽  
M. B. Kotlyarevskii ◽  
B. P. Dement'ev ◽  
V. N. Mikhalenko ◽  
N. V. Serdyuk ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted

Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions

1978 ◽  
Vol 21 (7) ◽  
pp. 958-960
Author(s):  
B. S. Azikov ◽  
V. N. Brudnyi ◽  
A. P. Vyatkin ◽  
M. A. Krivov ◽  
V. M. Lupin ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted

Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 627-630 ◽  
Author(s):  
J. Stan˘o ◽  
V.A. Skuratov ◽  
M. Žis˘ka ◽  
P. Kováč
Keyword(s):  
Heavy Ions ◽  
High Energy ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mos Structures

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

EXAFS STUDY ON RADIATION INDUCED DEFECTS

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1045-C8-1048
Author(s):  
T. BOLZE ◽  
J. PEISL
Keyword(s):  
Radiation Induced ◽  
Exafs Study ◽  
Induced Defects

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration

2020 ◽  
Vol 14 (1) ◽  
pp. 011005
Author(s):  
Takuya Nakashima ◽  
Emi Kano ◽  
Keita Kataoka ◽  
Shigeo Arai ◽  
Hideki Sakurai ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Implanted

Formation of Drawing- or Radiation-Induced Defects in Germanium-Doped Silica Core Optical Fiber

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L233-L234 ◽  
Author(s):  
Yoshinori Hayashi ◽  
Yuki Okuda ◽  
Hisamitsu Mitera ◽  
Keizo Kato
Keyword(s):  
Optical Fiber ◽  
Radiation Induced ◽  
Silica Core ◽  
Induced Defects
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