Ultrasensitive glow discharge method for visualizing hypersonic flows of rarefied gases

1969 ◽  
Vol 7 (4) ◽  
pp. 75-78 ◽  
Author(s):  
V. M. Kalugin
Keyword(s):  
Glow Discharge ◽  
Hypersonic Flows ◽  
Rarefied Gases ◽  
Discharge Method

Velocity measurement in hypersonic flows using electron-beam-assisted glow discharge

AIAA Journal ◽  
1998 ◽  
Vol 36 ◽  
pp. 1061-1064
Author(s):  
S. Larigaldie ◽  
D. Bize ◽  
A. K. Mohamed ◽  
M. Ory ◽  
J. Soutade ◽  
...  
Keyword(s):  
Electron Beam ◽  
Glow Discharge ◽  
Velocity Measurement ◽  
Hypersonic Flows

Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Faraji ◽  
Sunil Gokhale ◽  
S. M. Chaudhari ◽  
M. G. Takwale ◽  
S. V. Ghaisas
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Surface ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Radio Frequency Glow Discharge ◽  
Absorption Studies ◽  
Discharge Method

ABSTRACTHydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

Brazing in hydrogen by a glow discharge method

1963 ◽  
Vol 40 (11) ◽  
pp. 542-542 ◽  
Author(s):  
B Brandt
Keyword(s):  
Glow Discharge ◽  
Discharge Method

Defect Properties of Cathode Deposited Glow Discharge Amorphous Silicon Germanium Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
Fan Zhong ◽  
Chih-Chiang Chen ◽  
J. David Cohen ◽  
Paul Wickboldt ◽  
William Paul
Keyword(s):  
Glow Discharge ◽  
Silicon Germanium ◽  
Defect Formation ◽  
Optical Spectra ◽  
Drive Level ◽  
Formation Model ◽  
Energy Distributions ◽  
Amorphous Silicon Germanium ◽  
Discharge Method ◽  
Defect Densities

ABSTRACTWe have characterized the deep defect densities and their energy distributions for a series of a-Si1-xGex:H alloys with large Ge content (0.57< × < 1.00) prepared by the cathode deposited glow discharge method. Our results indicate markedly superior properties for these samples. A small Urbach tail slope (about 45meV) was found for all samples in this alloy range. The defect densities were either obtained directly from the drive-level capacitance profiling or deduced from the sub-band-gap optical spectra. Both are substantially lower than the trend line determined from previous studies of a-Si1-xGex:H samples produced by conventional glow discharge and by Photo-CVD methods. However, the relation between the total defect densities and the optical spectra in the cathodic samples obeys the same defect formation model that has been used to successfully predict the defect densities in other types of a-Si1-xGex:H material.

Photoluminescence of quasi-one dimensional amorphous Si1−xCx:H prepared by the glow discharge method

1987 ◽  
Vol 64 (10) ◽  
pp. 1261-1264 ◽  
Author(s):  
S. Nonomura ◽  
S. Hattori ◽  
S. Nitta
Keyword(s):  
Glow Discharge ◽  
One Dimensional ◽  
Discharge Method

Properties of a-SiGe and Application to Stacked Solar Cell

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Itozaki ◽  
N. Fujita
Keyword(s):  
Solar Cell ◽  
Glow Discharge ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Boron Doping ◽  
Lower Pressure ◽  
Deposition Technique ◽  
Single Junction ◽  
Single Junction Solar Cell ◽  
Discharge Method

AbstractDeposition technique of a-SiGe:H and its application to a stacked solar sell were investigated. Properties of a-SiGe:H were improved by a glow discharge method with a negatively biased substrate, and a mercury sensitized photo CVD under lower pressure. An a-SiGe:H single junction solar cell was improved by slight boron doping to an i layer and insertion of a buffer layer into a p/i interface. A conversion efficiency of more than 10 % was obtained by a triple stacked solar cell on a alass substrate.

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