Properties of a-SiGe and Application to Stacked Solar Cell
Keyword(s):
AbstractDeposition technique of a-SiGe:H and its application to a stacked solar sell were investigated. Properties of a-SiGe:H were improved by a glow discharge method with a negatively biased substrate, and a mercury sensitized photo CVD under lower pressure. An a-SiGe:H single junction solar cell was improved by slight boron doping to an i layer and insertion of a buffer layer into a p/i interface. A conversion efficiency of more than 10 % was obtained by a triple stacked solar cell on a alass substrate.
2016 ◽
Vol 07
(12)
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pp. 823-835
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The efficiency of the single junction and multijunction InxGa1-xN solar cell using AMPS-1D simulator
2013 ◽
Vol 37
(1)
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pp. 65-72
2016 ◽
Vol 18
(4)
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pp. 2906-2912
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Keyword(s):
2017 ◽
Vol 168
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pp. 201-206
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