Properties of a-SiGe and Application to Stacked Solar Cell

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Itozaki ◽  
N. Fujita

AbstractDeposition technique of a-SiGe:H and its application to a stacked solar sell were investigated. Properties of a-SiGe:H were improved by a glow discharge method with a negatively biased substrate, and a mercury sensitized photo CVD under lower pressure. An a-SiGe:H single junction solar cell was improved by slight boron doping to an i layer and insertion of a buffer layer into a p/i interface. A conversion efficiency of more than 10 % was obtained by a triple stacked solar cell on a alass substrate.

2013 ◽  
Vol 37 (1) ◽  
pp. 65-72
Author(s):  
Md Fazlul Huq ◽  
Zamshed Iqbal Chowdhury ◽  
Mehedhi Hasan ◽  
Zahid Hasan Mahmood

Transparency loss and excess excitation loss are responsible for relatively lower conversion efficiency of single junction solar cell. One way to reduce these two losses is to use multijunction solar cell. In this research InxGa1-xN based single, double and triple junction solar cells were simulated employing AMPS-1D simulator. The band gap of each layer depends on the composition percentage of InN and GaN within InxGa1-xN. In this simulation the authors found 24.51, 33.89, and 42.12% efficiencies for single, double and triple junctions, respectively. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15682 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 65-72, 2013


2016 ◽  
Vol 18 (4) ◽  
pp. 2906-2912 ◽  
Author(s):  
Hye Jin Lee ◽  
Jae Won Lee ◽  
Hee Jun Kim ◽  
Dae-Han Jung ◽  
Ki-Suk Lee ◽  
...  

A GaAs single junction solar cell with Al-doped ZnO nanosheet-based antireflection coatings was fabricated and showed the largest enhancement (43.9%) in power conversion efficiency.


2017 ◽  
Vol 168 ◽  
pp. 201-206 ◽  
Author(s):  
Z.C. Su ◽  
S.J. Xu ◽  
R.X. Wang ◽  
J.Q. Ning ◽  
J.R. Dong ◽  
...  

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