Relationship between the structure and the thermal oxidation process of coke powders

Refractories ◽  
1992 ◽  
Vol 33 (1-2) ◽  
pp. 14-18
Author(s):  
Yu. A. Pirogov ◽  
P. Ya. Pustovar ◽  
I. A. Kutuzyan ◽  
Yu. F. Boiko
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

1995 ◽  
Vol 196-201 ◽  
pp. 1817-1822 ◽  
Author(s):  
H. Daio ◽  
K. Yakushiji ◽  
A. Buczkowski ◽  
F. Shimura
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Silicon Wafers ◽  
Thermal Oxidation Process

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

1996 ◽  
Vol 143 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Nakashima ◽  
T. Katayama ◽  
Y. Miyamura ◽  
A. Matsuzaki ◽  
M. Kataoka ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

scholarly journals Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Shun Sing Liao ◽  
Yueh Chin Lin ◽  
Chuan Lung Chuang ◽  
Edward Yi Chang
Keyword(s):  
Solar Cells ◽  
Thermal Oxidation ◽  
Growth Temperature ◽  
Surface Passivation ◽  
Oxidation Process ◽  
Silicon Solar Cells ◽  
Growth Time ◽  
Thermal Oxide ◽  
Step Growth ◽  
Thermal Oxidation Process

In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780°C, a growth time of 5 min, and with N2/O2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750°C, growth time of 20 min, and under pure N2 gas environment. Carrier lifetime was increased to 15.45 μs, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.

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