Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process

1998 ◽  
Vol 19 (10) ◽  
pp. 367-369 ◽  
Author(s):  
Y. Wu ◽  
G. Lucovsky
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gate Dielectrics ◽  
Remote Plasma ◽  
Plasma Enhanced Cvd ◽  
Nitride Oxide ◽  
Thermal Oxidation Process

Relationship between the structure and the thermal oxidation process of coke powders

Refractories ◽  
1992 ◽  
Vol 33 (1-2) ◽  
pp. 14-18
Author(s):  
Yu. A. Pirogov ◽  
P. Ya. Pustovar ◽  
I. A. Kutuzyan ◽  
Yu. F. Boiko
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

1996 ◽  
Vol 143 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Nakashima ◽  
T. Katayama ◽  
Y. Miyamura ◽  
A. Matsuzaki ◽  
M. Kataoka ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process
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