Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

1996 ◽  
Vol 143 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Nakashima ◽  
T. Katayama ◽  
Y. Miyamura ◽  
A. Matsuzaki ◽  
M. Kataoka ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Morphological Effect of Composite Coated SUS430 Steel during Thermal Oxidation Process

2015 ◽  
Vol 1125 ◽  
pp. 111-115
Author(s):  
Raden Dadan Ramdan ◽  
Asep Ridwan Setiawan ◽  
Rochim Suratman
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Sol Gel ◽  
Composite Layer ◽  
Morphological Aspect ◽  
Morphological Effect ◽  
Before And After ◽  
Coating Method ◽  
Thermal Oxidation Process

High temperature behaviour is important characteristic to be evaluated for internconnect materials in solid oxide fuel cell (SOFC) application. The present works concern in evaluating the morphological effect of composite coated SUS430, prospective material for SOFC application, on the high temperature behavior of the composite. Thermal spray method has been conducted as the major coating processes whereas thermal oxidation and sol gel coating is the addition coating method performed in the present works. Through variation of coating processes in the present works, different morphology of composite coated SUS430 alloy were obtained. Scanning electron microscope (SEM) characterizations have been performed in order to evaluate the morphological aspect of the coated samples before and after thermal oxidation process. In addition, X-ray diffraction characterization has been performed in order to identified the existing phase before and after thermal oxidation. From both characterization results, it was obtained that particle size of the composite layer influences the compactness and porous characteristic of the layer and in turn influences the oxidation characteristic of the layer during high temperature services.

Thin Silicon Dioxide using the Rapid Thermal Oxidation Process for Trench Capacitors

1989 ◽  
Vol 146 ◽  
Author(s):  
Morio Inoue ◽  
Kenji Yoneda
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Temperature Uniformity ◽  
Conventional Furnace ◽  
Thermal Oxidation Process

ABSTRACTElectrical characteristics of trench capacitor using RTO oxide, nitroxide and reoxidized nitroxide as the gate insulator are discussed. High temperature RTO is effective to prevent the oxide thinning at the trench corner and dielectric strength of trench capacitor is improved drastically. The lifetime of trench capacitors using RTO is more than 10 times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxide as the gate insulator, higher charge to breakdown is obtained. The RTP is superior to the process using the conventional furnace for gate insulator of trench capacitor. Improvement in temperature uniformity and operation reproducibility are essential to RTP equipments for production use.

Relationship between the structure and the thermal oxidation process of coke powders

Refractories ◽  
1992 ◽  
Vol 33 (1-2) ◽  
pp. 14-18
Author(s):  
Yu. A. Pirogov ◽  
P. Ya. Pustovar ◽  
I. A. Kutuzyan ◽  
Yu. F. Boiko
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

1995 ◽  
Vol 196-201 ◽  
pp. 1817-1822 ◽  
Author(s):  
H. Daio ◽  
K. Yakushiji ◽  
A. Buczkowski ◽  
F. Shimura
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Silicon Wafers ◽  
Thermal Oxidation Process
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