Sol-Gel processing of Sm2+-doped glass and its spectral hole burning at room temperature

1997 ◽  
Vol 8 (1-3) ◽  
pp. 867-870
Author(s):  
Masayuki Nogami ◽  
Yoshihiro Abe
Keyword(s):  
Room Temperature ◽  
Sol Gel ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Doped Glass ◽  
Gel Processing

Defect centers and room temperature persistent spectral hole burning in X-ray irradiated Eu3+-doped glass

2002 ◽  
Vol 96 (2-4) ◽  
pp. 163-169 ◽  
Author(s):  
Masayuki Nogami ◽  
Tomotaka Ishikawa ◽  
Tomokatsu Hayakawa
Keyword(s):  
Room Temperature ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
X Ray ◽  
Spectral Hole ◽  
Defect Centers ◽  
Doped Glass

Room-temperature persistent spectral hole burning of x-ray-irradiated Sm3+-doped glass

2000 ◽  
Vol 12 (23) ◽  
pp. 5061-5067 ◽  
Author(s):  
Jianrong Qiu ◽  
Kentarou Nouchi ◽  
Kiyotaka Miura ◽  
Tsuneo Mitsuyu ◽  
Kazuyuki Hirao
Keyword(s):  
Room Temperature ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
X Ray ◽  
Spectral Hole ◽  
Doped Glass

Room temperature spectral hole burning and elimination of photodarkening in sol‐gel derived CdS quantum dots

1994 ◽  
Vol 64 (12) ◽  
pp. 1487-1489 ◽  
Author(s):  
K. Kang ◽  
A. D. Kepner ◽  
Y. Z. Hu ◽  
S. W. Koch ◽  
N. Peyghambarian ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Sol Gel ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Cds Quantum Dots ◽  
Spectral Hole

Room-temperature persistent spectral hole burning of rare-earth-ion-doped glasses prepared by sol-gel process

2000 ◽  
Author(s):  
Masayuki Nogami ◽  
Tomokatsu Hayakawa ◽  
Tomotaka Ishikawa ◽  
Takehito Nagakura ◽  
Toshihiro Kasuga
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Sol Gel ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Rare Earth Ion ◽  
Spectral Hole ◽  
Sol Gel Process ◽  
Doped Glasses

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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