Evaluation of high-Temperature diffusion barriers for the Pt-Mo system

1988 ◽  
Vol 19 (9) ◽  
pp. 2163-2170 ◽  
Author(s):  
Richard P. Walters ◽  
Bernard S. Covino
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
Temperature Diffusion

High-temperature diffusion barriers from Si-rich silicon-nitride

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1687-1691 ◽  
Author(s):  
G. Bilger ◽  
T. Voss ◽  
T. Schlenker ◽  
A. Strohm
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Diffusion Barriers ◽  
Temperature Diffusion

High-temperature diffusion barriers for protective coatings

2004 ◽  
Vol 188-189 ◽  
pp. 153-157 ◽  
Author(s):  
J.A. Haynes ◽  
Y. Zhang ◽  
K.M. Cooley ◽  
L. Walker ◽  
K.S. Reeves ◽  
...  
Keyword(s):  
High Temperature ◽  
Protective Coatings ◽  
Diffusion Barriers ◽  
Temperature Diffusion

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Microstructure and performance of Al-Si alloy with high Si content by high temperature diffusion treatment

2010 ◽  
Vol 20 (11) ◽  
pp. 2134-2138 ◽  
Author(s):  
Zi-yang XIU ◽  
Guo-qin CHEN ◽  
Xiao-feng WANG ◽  
Gao-hui WU ◽  
Yan-mei LIU ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffusion Treatment ◽  
Temperature Diffusion ◽  
And Performance ◽  
Si Content ◽  
Microstructure And Performance

High-temperature diffusion behavior of ZrC in C matrix and its promotion on graphitization

2016 ◽  
Vol 26 (8) ◽  
pp. 2257-2262 ◽  
Author(s):  
Zhong-wei ZHANG ◽  
Qiang ZHEN ◽  
Feng ZHENG ◽  
Fei LU ◽  
Ce-wen NAN ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffusion Behavior ◽  
Temperature Diffusion

Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

2021 ◽  
Vol 57 (7) ◽  
pp. 655-662
Author(s):  
M. K. Bakhadirkhanov ◽  
Kh. M. Iliev ◽  
M. O. Tursunov ◽  
S. B. Isamov ◽  
S. V. Koveshnikov ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Temperature Diffusion ◽  
Silicon Doped
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