High-temperature diffusion barriers from Si-rich silicon-nitride

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1687-1691 ◽  
Author(s):  
G. Bilger ◽  
T. Voss ◽  
T. Schlenker ◽  
A. Strohm
1988 ◽  
Vol 19 (9) ◽  
pp. 2163-2170 ◽  
Author(s):  
Richard P. Walters ◽  
Bernard S. Covino

2004 ◽  
Vol 188-189 ◽  
pp. 153-157 ◽  
Author(s):  
J.A. Haynes ◽  
Y. Zhang ◽  
K.M. Cooley ◽  
L. Walker ◽  
K.S. Reeves ◽  
...  

Author(s):  
D. R. Clarke ◽  
G. Thomas

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.


Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.


Author(s):  
Gareth Thomas

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.


Author(s):  
N. Rozhanski ◽  
A. Barg

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.


2017 ◽  
Vol 43 (6) ◽  
pp. 5080-5088 ◽  
Author(s):  
Hiroyuki Miyazakia ◽  
Shoji Iwakiri ◽  
Kiyoshi Hirao ◽  
Shinji Fukuda ◽  
Noriya Izu ◽  
...  

Author(s):  
Andrea Zambotti ◽  
Edoardo Caldesi ◽  
Massimo Pelizzari ◽  
Francesco Valentini ◽  
Alessandro Pegoretti ◽  
...  

1992 ◽  
Vol 33 (7) ◽  
pp. 659-668 ◽  
Author(s):  
Katsuaki Suganuma ◽  
Genn Sasaki ◽  
Teruaki Fujita ◽  
Mitsuhiro Tokuse

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