Reliable, High Temperature Stable Schottky Contacts to GaAs Based on LaB6 Diffusion Barriers

ESSDERC ’89 ◽  
1989 ◽  
pp. 165-168 ◽  
Author(s):  
J. Würfl ◽  
J. K. Singh ◽  
H. L. Hartnagel
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
Schottky Contacts

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

High-temperature (350 °C) oxidized iridium Schottky contacts on β-Ga2O3

2019 ◽  
Vol 114 (23) ◽  
pp. 233503 ◽  
Author(s):  
Caixia Hou ◽  
Robert A. Makin ◽  
Krystal R. York ◽  
Steven M. Durbin ◽  
Jonty I. Scott ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Contacts

High temperature characteristics of Pd Schottky contacts on n-type GaN

1996 ◽  
Vol 32 (19) ◽  
pp. 1832 ◽  
Author(s):  
A.C. Schmitz ◽  
A.T. Ping ◽  
M. Asif Khan ◽  
Q. Chen ◽  
J.W. Yang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Contacts ◽  
Temperature Characteristics

Evaluation of high-Temperature diffusion barriers for the Pt-Mo system

1988 ◽  
Vol 19 (9) ◽  
pp. 2163-2170 ◽  
Author(s):  
Richard P. Walters ◽  
Bernard S. Covino
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
Temperature Diffusion

Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC

2005 ◽  
Vol 485 (1-2) ◽  
pp. 207-211 ◽  
Author(s):  
C.M. Eichfeld ◽  
M.A. Horsey ◽  
S.E. Mohney ◽  
A.V. Adedeji ◽  
J.R. Williams
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
P Type

scholarly journals Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature

2013 ◽  
Vol 60 (11) ◽  
pp. 3814-3820
Author(s):  
Gaetan Toulon ◽  
Abdelhakim Bourennane ◽  
Karine Isoird
Keyword(s):  
High Temperature ◽  
Schottky Contacts

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

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