The tight-binding method for interpolating first-principles total energy results

1997 ◽  
Vol 18 (6) ◽  
pp. 593-597 ◽  
Author(s):  
D. A. Papaconstantopoulos ◽  
M. J. Mehl
1997 ◽  
Vol 491 ◽  
Author(s):  
D. A. Papaconstantopoulos ◽  
M. J. Mehl ◽  
S. C. Erwin ◽  
M. R. Pederson

ABSTRACTWe demonstrate that our tight-binding method - which is based on fitting the energy bands and the total energy of first-principles calculations as a function of volume - can be easily extended to accurately describe carbon and silicon. We present equations of state that give the correct energy ordering between structures. We also show that quantities that were not fitted, such as elastic constants and the band structure of C60, can be reliably obtained from our scheme.


1997 ◽  
Vol 491 ◽  
Author(s):  
A. Bere ◽  
A. Hairie ◽  
G. Nouet ◽  
E. Paumier

ABSTRACTThe semi-empirical tight-binding method is used to build up an interatomic potential in zinc. Using relaxed structures, the parameters are fitted to the lattice parameters, the elastic constants and the vacancy formation energy. The total energy calculation predicts the stability of the h.c.p. structure. The potential is used to calculate the energy of some extended defects: the basal stacking fault and two twin boundaries.


2019 ◽  
Vol 7 (39) ◽  
pp. 12151-12159 ◽  
Author(s):  
Lijun Meng ◽  
Jiafang Wu ◽  
Yizhi Li ◽  
Jianxin Zhong

We investigated the topological properties of hexagonal transition metal monochalcogenides (TMMs) MoTe and WTe by combining first-principles calculations, the Wannier-based tight-binding method and the low energy k·p effective model.


2003 ◽  
Vol 26 (1) ◽  
pp. 155-158 ◽  
Author(s):  
B. T. Cong ◽  
P. N. A. Huy ◽  
P. K. Schelling ◽  
J. W. Halley

2001 ◽  
Vol 700 ◽  
Author(s):  
Anders G. Froseth ◽  
Peter Derlet ◽  
Ragnvald Hoier

AbstractEmpirical Total Energy Tight Binding (TETB) has proven to be a fast and accurate method for calculating materials properties for various system, including bulk, surface and amorphous structures. The determination of the tight binding parameters from first-principles results is a multivariate, non-linear optimization problem with multiple local minima. Simulated annealing is an optimization method which is flexible and “guaranteed” to find a global minimum, opposed to classical methods like non-linear least squares algorithms. As an example results are presented for a nonorthogonal s,p parameterization for Silicon based on the NRL tight binding formalism.


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