Plasma environment during hot cathode direct current discharge plasma chemical vapor deposition of diamond films

1999 ◽  
Vol 42 (3) ◽  
pp. 332-336
Author(s):  
Zhu Xiaodong ◽  
Zhan Rujuan ◽  
Zhou Haiyang ◽  
Hu Min ◽  
Wen Xiaohui ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Current Discharge ◽  
Plasma Chemical Vapor Deposition ◽  
Direct Current Discharge

Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4400-4403 ◽  
Author(s):  
Mikio Noda ◽  
Hiroshi Kusakabe ◽  
Kazuya Taniguchi ◽  
Shigeo Maruno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

Carbon ◽  
2013 ◽  
Vol 51 ◽  
pp. 437 ◽  
Author(s):  
Hong-wei Jiang ◽  
Hai-liang Huang ◽  
Xiang-hua Jia ◽  
Long-cheng Yin ◽  
Yu-qiang Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Cathode Plasma ◽  
Plasma Chemical Vapor Deposition

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

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