Quantum effects in the interaction between free electrons and electromagnetic fields

1954 ◽  
Vol 4 (1) ◽  
pp. 23-30 ◽  
Author(s):  
P. S. Faragó ◽  
G. Marx
MRS Bulletin ◽  
2005 ◽  
Vol 30 (5) ◽  
pp. 338-348 ◽  
Author(s):  
Younan Xia ◽  
Naomi J. Halas

AbstractThe interaction of light with free electrons in a gold or silver nanostructure can give rise to collective excitations commonly known as surface plasmons. Plasmons provide a powerful means of confining light to metal/dielectric interfaces, which in turn can generate intense local electromagnetic fields and significantly amplify the signal derived from analytical techniques that rely on light, such as Raman scattering. With plasmons, photonic signals can be manipulated on the nanoscale, enabling integration with electronics (which is now moving into the nano regime). However, to benefit from their interesting plasmonic properties, metal structures of controlled shape (and size) must be fabricated on the nanoscale. This issue of MRS Bulletin examines how gold and silver nanostructures can be prepared with controllable shapes to tailor their surface plasmon resonances and highlights some of the unique applications that result, including enhancement of electromagnetic fields, optical imaging, light transmission, colorimetric sensing, and nanoscale waveguiding.


Author(s):  
C. Hayzelden ◽  
J. L. Batstone

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.


2005 ◽  
Vol 24 (1) ◽  
pp. 2-10 ◽  
Author(s):  
Kenneth F. Taylor ◽  
Nozumu Inoue ◽  
Bahman Rafiee ◽  
John E. Tis ◽  
Kathleen A. McHale ◽  
...  

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