Diode lasers based on quantum dots

2007 ◽  
pp. 203-214 ◽  
Author(s):  
M. Grundmann ◽  
F. Heinrichsdorff ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
Zh. I. Alferov
Keyword(s):  
Quantum Dots ◽  
Diode Lasers

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

2007 ◽  
Author(s):  
Paul Crump ◽  
Steve Patterson ◽  
Sandrio Elim ◽  
Shiguo Zhang ◽  
Mike Bougher ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wavelength Range ◽  
Diode Lasers ◽  
Sensing Applications ◽  
Single Emitter ◽  
Cascade Lasers

scholarly journals Дискриминация поперечных мод в торцевых полупроводниковых лазерах с пространственной модуляцией отражения выходных зеркал

2019 ◽  
Vol 53 (2) ◽  
pp. 211
Author(s):  
Н.Ю. Гордеев ◽  
А.С. Паюсов ◽  
И.С. Мухин ◽  
А.А. Серин ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Diode Lasers ◽  
High Order ◽  
Growth Technique ◽  
Lateral Modes

AbstractA post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

2006 ◽  
Author(s):  
Kallista Sears ◽  
Hark Tan ◽  
Manuela Buda ◽  
Jenny Wong-Leung ◽  
Chennupati Jagadish
Keyword(s):  
Quantum Dots ◽  
Diode Lasers

Semiconductor quantum dots for application in diode lasers

1998 ◽  
Vol 318 (1-2) ◽  
pp. 83-87 ◽  
Author(s):  
M. Grundmann ◽  
N.N. Ledentsov ◽  
N. Kirstaedter ◽  
F. Heinrichsdorff ◽  
A. Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diode Lasers ◽  
Semiconductor Quantum Dots

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

1998 ◽  
Vol 32 (12) ◽  
pp. 1323-1327 ◽  
Author(s):  
V. P. Evtikhiev ◽  
I. V. Kudryashov ◽  
E. Yu. Kotel’nikov ◽  
V. E. Tokranov ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Diode Lasers ◽  
Stimulated Emission ◽  
Inas Quantum Dots

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

2000 ◽  
Vol 15 (11) ◽  
pp. 1061-1064 ◽  
Author(s):  
S S Mikhrin ◽  
A E Zhukov ◽  
A R Kovsh ◽  
N A Maleev ◽  
V M Ustinov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diode Lasers

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Semiconductor Quantum Dots

2014 ◽  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots

New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 283-287
Author(s):  
H Ko
Keyword(s):  
Quantum Dots ◽  
New Approach
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