Ternary semiconductors

2007 ◽  
pp. 149-165 ◽  
Author(s):  
Angus MacKinnon
Keyword(s):  
Ternary Semiconductors

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Bonding and stability in narrow‐gap ternary semiconductors for infrared applications

1986 ◽  
Vol 4 (4) ◽  
pp. 2010-2013 ◽  
Author(s):  
A. Wall ◽  
C. Caprile ◽  
A. Franciosi ◽  
M. Vaziri ◽  
R. Reifenberger ◽  
...  
Keyword(s):  
Narrow Gap ◽  
Ternary Semiconductors

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

2012 ◽  
Vol 47 (15) ◽  
pp. 5735-5742 ◽  
Author(s):  
Dongguo Chen ◽  
N. M. Ravindra
Keyword(s):  
Pressure Dependence ◽  
Energy Gap ◽  
Ternary Semiconductors

Electrical properties of some molten ternary semiconductors

1977 ◽  
Vol 55 (11) ◽  
pp. 1975-1978 ◽  
Author(s):  
Yoshio Nakamura ◽  
Masamitsu Naoi ◽  
Mitsuo Shimoji
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Ternary Semiconductors ◽  
Effect Of Doping

The electrical conductivity and thermoelectric power of molten AgTlSe2, AgTlSe, and Tl2Se3 have been measured as a function of temperature. The effect of doping with Ag, Tl, and Se on the electrical properties of molten AgTlSe has also been studied. The results are discussed in terms of the pseudogap model.

Electronic structure of III-V ternary semiconductors

1989 ◽  
Vol 1 (30) ◽  
pp. 4913-4930 ◽  
Author(s):  
V B Gera ◽  
R Gupta ◽  
K P Jain
Keyword(s):  
Electronic Structure ◽  
Ternary Semiconductors
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