scholarly journals Three-dimensional structuring of sapphire by sequential He + ion-beam implantation and wet chemical etching

2003 ◽  
Vol 76 (7) ◽  
pp. 1109-1112 ◽  
Author(s):  
A. Crunteanu ◽  
G. Jänchen ◽  
P. Hoffmann ◽  
M. Pollnau ◽  
C. Buchal ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Implantation ◽  
Wet Chemical ◽  
Wet Chemical Etching

Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Wei Chen ◽  
P. Chen ◽  
A. Madhukar ◽  
R. Viswanathan ◽  
J. So
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing ◽  
Scale Thickness ◽  
Ion Beam Implantation ◽  
Etch Stop ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

Micro Fabrication by Focused Ion Beam and Wet Chemical Etching

2004 ◽  
Vol 2004.5 (0) ◽  
pp. 111-112
Author(s):  
Noritaka KAWASEGI ◽  
Noboru MORITA ◽  
Noboru TAKANO ◽  
Kiwamu ASHIDA ◽  
Jun TANIGUCHI ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching

Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6142-6144 ◽  
Author(s):  
Harald König ◽  
Johann Peter Reithmaier ◽  
Alfred Forchel
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Maskless Patterning

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

1986 ◽  
Vol 49 (11) ◽  
pp. 654-656 ◽  
Author(s):  
J. R. A. Cleaver ◽  
P. J. Heard ◽  
A. F. Evason ◽  
H. Ahmed
Keyword(s):  
Silicon Dioxide ◽  
Chemical Etching ◽  
Ion Beam ◽  
Fine Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching
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