Micro Fabrication by Focused Ion Beam and Wet Chemical Etching

2004 ◽  
Vol 2004.5 (0) ◽  
pp. 111-112
Author(s):  
Noritaka KAWASEGI ◽  
Noboru MORITA ◽  
Noboru TAKANO ◽  
Kiwamu ASHIDA ◽  
Jun TANIGUCHI ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching

Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Wei Chen ◽  
P. Chen ◽  
A. Madhukar ◽  
R. Viswanathan ◽  
J. So
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing ◽  
Scale Thickness ◽  
Ion Beam Implantation ◽  
Etch Stop ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6142-6144 ◽  
Author(s):  
Harald König ◽  
Johann Peter Reithmaier ◽  
Alfred Forchel
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Maskless Patterning

Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
W. Hauffe
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Inert Gas ◽  
Specimen Preparation ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.

scholarly journals Three-dimensional structuring of sapphire by sequential He + ion-beam implantation and wet chemical etching

2003 ◽  
Vol 76 (7) ◽  
pp. 1109-1112 ◽  
Author(s):  
A. Crunteanu ◽  
G. Jänchen ◽  
P. Hoffmann ◽  
M. Pollnau ◽  
C. Buchal ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Implantation ◽  
Wet Chemical ◽  
Wet Chemical Etching

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

1986 ◽  
Vol 49 (11) ◽  
pp. 654-656 ◽  
Author(s):  
J. R. A. Cleaver ◽  
P. J. Heard ◽  
A. F. Evason ◽  
H. Ahmed
Keyword(s):  
Silicon Dioxide ◽  
Chemical Etching ◽  
Ion Beam ◽  
Fine Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching

Micro Fabrication by Tribo-Nanolithography and Wet Chemical Etching

2004 ◽  
Vol 2004.5 (0) ◽  
pp. 139-140
Author(s):  
Noritaka KAWASEGI ◽  
Noboru MORITA ◽  
Shigeru YAMADA ◽  
Noboru TAKANO ◽  
Tatsuo OYAMA ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching

Broad Ion Beam “Slope Cutting” Technique for Cross Sectional SEM Specimen Preparation of Semiconductors

2000 ◽  
Vol 6 (S2) ◽  
pp. 496-497 ◽  
Author(s):  
R. Alani ◽  
W. Hauffe ◽  
R. J. Mitro
Keyword(s):  
Focused Ion Beam ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Cross Sectional ◽  
New Approach ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Cut Surface ◽  
Beam Technique

Cross sectional SEM specimens are routinely prepared for process monitoring/development, fabrication problem solving and failure analysis in semiconductor industries. A considerable variety of established methods are already in place for production of these specimens. They include: mechanical polishing, manual/automated cleaving, wet chemical etching and focused ion beam (FIB) milling. This report covers a new approach to the preparation of such specimens utilizing a broad ion beam technique. The technique consists of three steps, I) perpendicular “slope cutting” to expose the profile of the layers/features in the starting wafer, II) etching of the cut surface to delineate the microstructures and III) coating the specimen with a conductive thin film to prevent charging effects in the SEM. All three steps are carried out in a dedicated broad ion beam instrument, designed initially to etch and coat SEM specimens in one vacuum chamber [1]. The entire three-step process can be completed in one hour.

An Experimental Study of TMAH Etching Silicon for MEMS

2007 ◽  
Author(s):  
Feiyan Chen ◽  
Guoqing Hu ◽  
Baihai Wu
Keyword(s):  
Experimental Data ◽  
Silicon Wafer ◽  
Chemical Etching ◽  
Etching Rate ◽  
Etching Time ◽  
Fabrication Technology ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Tmah Solution

In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper. The micro-fabrication technology and micro-fabrication process are also discussed. In the same time, all experimental data are put forward in details.

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