Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

2005 ◽  
Vol 82 (2) ◽  
pp. 305-308 ◽  
Author(s):  
Y. Qu ◽  
J.X. Zhang ◽  
A. Uddin ◽  
C.Y. Liu ◽  
S. Yuan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Anodic Oxidation ◽  
Transition Energy ◽  
Interband Transition ◽  
Ridge Waveguide ◽  
Waveguide Lasers ◽  
Ridge Waveguide Lasers

Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers

1994 ◽  
Vol 76 (8) ◽  
pp. 4479-4487 ◽  
Author(s):  
S. Y. Hu ◽  
S. W. Corzine ◽  
K.‐K. Law ◽  
D. B. Young ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Quantum Well ◽  
Surface Recombination ◽  
Ridge Waveguide ◽  
Carrier Diffusion ◽  
Waveguide Lasers ◽  
Ridge Waveguide Lasers

High performance strain-compensated InGaAsN quantum-well ridge waveguide lasers

2005 ◽  
Author(s):  
Yi Qu ◽  
Jing Zhang ◽  
Hui Li ◽  
Xin Gao ◽  
Baoxue Bo ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Ridge Waveguide ◽  
Waveguide Lasers ◽  
Ridge Waveguide Lasers
Sign in / Sign up

Export Citation Format

Share Document