Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

2016 ◽  
Vol 122 (6) ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Nickel Silicide ◽  
Lateral Crystallization ◽  
Channel Bottom ◽  
Si Thin Film ◽  
Bottom Gate

scholarly journals Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

2016 ◽  
Vol 122 (7) ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Nickel Silicide ◽  
Lateral Crystallization ◽  
Channel Bottom ◽  
Si Thin Film ◽  
Bottom Gate

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

2017 ◽  
Vol 129 ◽  
pp. 6-9 ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
Yong Hee Lee ◽  
Ji Su Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nickel Silicide ◽  
Lateral Crystallization ◽  
Si Thin Film ◽  
Bottom Gate

P Channel Mosfet Devices in Nanocrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Durga Panda ◽  
Max Noack ◽  
Vikram Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Phosphorus Content ◽  
Thin Film Transistor ◽  
Nanocrystalline Silicon ◽  
Simple Process ◽  
P Type ◽  
Si Thin Film ◽  
Bottom Gate ◽  
Nanocrystalline Si

AbstractWe report on the growth and properties of p-channel nanocrystalline Si thin film transistor (TFT) devices. In contrast to previous work, the devices are fabricated in n-body nanocrystalline Si. The doping of the n-body is systematically changed by doping with ppm levels of phosphorous. The threshold voltage was found to change systematically as phosphorus content increased. The TFT devices are of the bottom-gate type, grown on oxidized Si wafers. Source and drain contacts were provided by using either plasma grown p type nanocrystalline layers, or by the simple process of Al diffusion. A top layer of plasma-deposited silicon dioxide was found to decrease the off current significantly. High on-off current ratios exceeding 106 were obtained. Hole mobilities in the devices were consistently good, with the best mobility being in the range of ~1.3 cm2/V-s.

A Kink-Free Bottom Gate Poly-Si Thin-Film Transistor with Smart Body Tie

2019 ◽  
Vol 2 (26) ◽  
pp. 1-7 ◽  
Author(s):  
Kuo Dong Huang ◽  
Jyi-Tsong Lin ◽  
Shih-Tsong Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Si Thin Film ◽  
Bottom Gate

Characteristics of New Poly-Si Thin Film Transistor with a-Si Channel Region Near the Source/Drain

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1064-1066 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Juhn-Suk Yoo ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Channel Region ◽  
Si Thin Film
Sign in / Sign up

Export Citation Format

Share Document