Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition

2002 ◽  
Vol 74 (2) ◽  
pp. 213-216 ◽  
Author(s):  
Z.Y. Chen ◽  
J.P. Zhao ◽  
T. Yano ◽  
T. Ooie
Keyword(s):  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition

1999 ◽  
Vol 86 (9) ◽  
pp. 4954-4958 ◽  
Author(s):  
Y. F. Lu ◽  
Z. M. Ren ◽  
T. C. Chong ◽  
B. A. Cheong ◽  
S. I. Pang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Carbon Nitride Thin Films Grown by Pulsed Laser Deposition

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Wide Range ◽  
Gas Atmosphere

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).

Influence of laser fluence on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed-laser deposition

2000 ◽  
Author(s):  
Jian Ping Zhao ◽  
Z. Y. Chen ◽  
T. Yano ◽  
Toshihiko Ooie ◽  
Masafumi Yoneda ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Carbon nitride thin films prepared by nitrogen ion assisted pulsed laser deposition of graphite using KrF excimer laser

1999 ◽  
Vol 339 (1-2) ◽  
pp. 38-43 ◽  
Author(s):  
Kazuhiro Yamamoto ◽  
Yoshinori Koga ◽  
Shuzo Fujiwara ◽  
Fumio Kokai ◽  
Jacob I. Kleiman ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Excimer Laser ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion ◽  
Krf Excimer Laser

Synthesis of BCN thin films by nitrogen ion beam assisted pulsed laser deposition from a B4C target

2007 ◽  
Vol 16 (8) ◽  
pp. 1579-1585 ◽  
Author(s):  
Z.F. Ying ◽  
D. Yu ◽  
H. Ling ◽  
N. Xu ◽  
Y.F. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion
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