Irradiation effect of low energy nitrogen-ion beam during pulsed laser deposition process on the structural and bonding properties of carbon–nitride thin films

2001 ◽  
Vol 89 (3) ◽  
pp. 1580 ◽  
Author(s):  
J. P. Zhao ◽  
Z. Y. Chen ◽  
T. Yano ◽  
T. Ooie ◽  
M. Yoneda
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Low Energy ◽  
Laser Deposition ◽  
Irradiation Effect ◽  
Bonding Properties ◽  
Nitrogen Ion

Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition

1999 ◽  
Vol 86 (9) ◽  
pp. 4954-4958 ◽  
Author(s):  
Y. F. Lu ◽  
Z. M. Ren ◽  
T. C. Chong ◽  
B. A. Cheong ◽  
S. I. Pang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition

2002 ◽  
Vol 74 (2) ◽  
pp. 213-216 ◽  
Author(s):  
Z.Y. Chen ◽  
J.P. Zhao ◽  
T. Yano ◽  
T. Ooie
Keyword(s):  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Carbon Nitride Thin Films Grown by Pulsed Laser Deposition

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Wide Range ◽  
Gas Atmosphere

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).

Influence of laser fluence on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed-laser deposition

2000 ◽  
Author(s):  
Jian Ping Zhao ◽  
Z. Y. Chen ◽  
T. Yano ◽  
Toshihiko Ooie ◽  
Masafumi Yoneda ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Carbon nitride thin films prepared by nitrogen ion assisted pulsed laser deposition of graphite using KrF excimer laser

1999 ◽  
Vol 339 (1-2) ◽  
pp. 38-43 ◽  
Author(s):  
Kazuhiro Yamamoto ◽  
Yoshinori Koga ◽  
Shuzo Fujiwara ◽  
Fumio Kokai ◽  
Jacob I. Kleiman ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Excimer Laser ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion ◽  
Krf Excimer Laser

Synthesis of BCN thin films by nitrogen ion beam assisted pulsed laser deposition from a B4C target

2007 ◽  
Vol 16 (8) ◽  
pp. 1579-1585 ◽  
Author(s):  
Z.F. Ying ◽  
D. Yu ◽  
H. Ling ◽  
N. Xu ◽  
Y.F. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion
Sign in / Sign up

Export Citation Format

Share Document