Manipulation by multiple filamentation of subpicosecond TW KrF laser beam

2018 ◽  
Vol 124 (5) ◽  
Author(s):  
V. D. Zvorykin ◽  
I. V. Smetanin ◽  
N. N. Ustinovskii ◽  
A. V. Shutov
2019 ◽  
Vol 36 (10) ◽  
pp. G25 ◽  
Author(s):  
Vladimir Zvorykin ◽  
Andrey Ionin ◽  
Daria Mokrousova ◽  
Leonid Seleznev ◽  
Igor’ Smetanin ◽  
...  

2021 ◽  
Vol 64 (1) ◽  
pp. 154-164
Author(s):  
A.A. Zemlyanov ◽  
◽  
Y.E. Geints ◽  
O.V. Minina ◽  
◽  
...  

The characteristics of the domain of multiple filamentation of femtosecond laser pulses in air were estimated based on the single filamentation model. As the single filamentation model, the diffraction-ray model is considered. It is based on the representation of a laser beam as a set of diffraction-ray tubes nested in each other that do not intersect in space and do not exchange energy with each other. In this situation changes in tubes shape and cross section during propagation demonstrate the effect of physical processes that occur with radiation in the medium. It is shown that the use of this model for interpreting experimental results and predicting effects is effective. In particular, it was demonstrated that the radius of small-scale intensity inhomogeneities in the profile of a centimeter laser beam, forming the domain of multiple filamentation of subterawatt femtosecond laser pulses, is several millimeters. The power in these inhomogeneities varies from several units to several tens of gigawatts. Telescoping the initial laser beam, leading to an increase in its radius, also expands the sizes of the initial small-scale intensity inhomogeneities and reduces the power contained in them. As a result of this, the coordinate of the filamentation beginning shifts along the path from the source of laser pulses. As the peak power in the beam increases, the length of the filaments and their number increase.


1989 ◽  
Vol 158 ◽  
Author(s):  
M. Murahara ◽  
M. Yonekawa ◽  
K. Shirakawa

ABSTRACTThe diffraction grating on SiC mirror was performed by a laser holographic method. In the present method, KrF laser and CIF3 was used for etchant gas. The ClF3 gas has an absorption band in the range between 200 and 400 nm. Therefore, CIF3 gas is effectively decomposed by the XeF, KrF and ArF excimer lasers' radiation. It is found that absorption of Si—C is about 50% in the range of between200 and 400 nm, and that the bonding energy of Si—C is lower than the photon energy of KrF laser beam. The above results indicate the direct decomposition of Si—Cbond. On the other hand, the threshold fluence energy for etching was 800 mJ/cm2 in 249 nm and in 193 nm as high as 7 J/cm2. In these results, the KrF laser is more effective than ArF laser. Then we applied KrF laser to crystalline SiC in an atmosphere of C1F3 gas. The divided two polarized KrF laser beams were interfered on the substrate. And the beams were used to photodissociated CIF3 gas in the proximity of substrate. Fluence of KrF laser beam was 1 J/cm2. The incidential angle of KrF laser beams was 20º and the grating gaps were 7170 Å, etching depth 1000 Å, and etching rate was 5 Å/pulse.


2019 ◽  
Vol 48 (4) ◽  
pp. 468-473
Author(s):  
Chironjit Hazarika ◽  
Abhijeet Das ◽  
Subrata Hazarika

Author(s):  
V.D. Zvorykin ◽  
A.A. Ionin ◽  
A.O. Levchenko ◽  
L.V. Seleznev ◽  
A.V. Shutov ◽  
...  

Optik ◽  
2017 ◽  
Vol 141 ◽  
pp. 124-129 ◽  
Author(s):  
Subrata Hazarika ◽  
Chironjit Hazarika ◽  
Abhijeet Das

1988 ◽  
Vol 129 ◽  
Author(s):  
M. Murahara ◽  
H. Arai ◽  
T. Matsumura

ABSTRACTResistless photoetching of SiC was performed by using XeF and KrF excimer laser beams. In this method, ClF3 gas was used for etchant. C1F3 gas has a unique absorption band in the range of 300- 430 nm. The strongest absorption band corresponds to the wavelength of the XeF laser (350 nm). So C1F3 gas is decomposed effectively. On the other hand, the absorption factor of SiC is about 30% in the range of 200-400 nm, and the bonding energy of SiC is lower than the photon energy of the KrF laser beam. For these reasons, it is possible to cut the bond of SiC directly. Thus, two laser beams were used. Fluence of the KrF laser beam was 200 mJ/cm2, of the XeF, 50 mJ/cm2. Total flow rates through the cell were 0.05 1/min. We can fabricated the etched feature of reticle pattern by reductive projection. Line and space was 10 μm and etching rate was 50Å/pulse.


1986 ◽  
Vol 57 (3) ◽  
pp. 217-220 ◽  
Author(s):  
J.M. Chiquier ◽  
L. Fini ◽  
R. Buffa ◽  
F. Pradère

1999 ◽  
Vol 44 (1-4) ◽  
pp. 117-122
Author(s):  
Isao Matsushima ◽  
Eiichi Takahashi ◽  
Yuji Matsumoto ◽  
Isao Okuda ◽  
Toshihisa Tomie ◽  
...  
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