Optimization and analysis of bridge type RF MEMS switch for X-band

Packaging of MEMS has been identified as one of the most significant areas of research for enabling MEMS usage in product applications. In order to make MEMS a real-life opportunity, it is vital to explore and develop an understanding of the possibilities and limitations of MEMS packaging. This paper presents several packaging structures for RF MEMS switch which based on GaAs substrate. The return loss of X-band RF MEMS switch before and after packaged can be simulated by Ansoft HFSS. The results show that return loss of RF MEMS switch after packaging deteriorated at least 3dB compared with that of before. Thermal mismatch caused by the variation of the temperature in the packaging process will introduce additional thermo-elastic strain and geometric deformation into the mechanical structure. The influence on return loss of the RF MEMS switch is researched in this paper too. Considering that, return loss simulated by HFSS decreases from -16.38dB to -16.88dB. Then, some design guidelines of RF MEMS packaging derived from the simulation of HFSS are also concluded at the end of the article.

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Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch

Micro and Nanosystems ◽

10.2174/1876402911666190820094947 ◽

2019 ◽

Vol 11 ◽

Author(s):

K. Srinivasa Rao ◽

Ch. Gopichand ◽

Koushik Guha ◽

N. P. Maity ◽

Reshmi Maity ◽

...

Keyword(s):

Return Loss ◽

Rf Mems ◽

Low Frequency ◽

Parameter Variation ◽

Rf Mems Switch ◽

Modeling And Analysis ◽

Mems Switch ◽

X Band ◽

Beam Thickness ◽

Fixed Type

In this paper, a capacitive RF MEMS Switch is designed and simulated for different parameter variation like by varying beam thickness and different materials. Materials play an important role on the performance of the device. So it is necessary to select an appropriate material for the beam. Three different materials are taken for the dielectric layer among them Silicon nitrite shown good performance. Similarly three different materials are considered for the beam like gold, titanium, and platinum. From the three materials gold is chosen as the best material for the beam by ASBYS approach. Gold is having high thermal conductivity with young’s modulus 77Gpa.The pull-in voltage of three materials is given as 1.9V, 2.76V, 2.28V. Beam thickness is also impact for the switch, so in this paper variation of beam thickness are shows clearly, by considering different beam thickness like 0.5um to 3um. The variation of beam thickness is tabulated for the three materials among the 2um thickness is best beam thickness for switch to operated X-band applications. The switch exhibits the return loss (S11) of -21.36dB, insertion loss (S12) of -0.147dB, and this switch is having good isolation (S21) of 52.04dB. Finally to designed and simulated fixed-fixed type RF MEMS switch is applicable for low frequency like the X-band applications.

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Design and Simulation of RF MEMS Switch for X-band Applications

SSRN Electronic Journal ◽

10.2139/ssrn.3517186 ◽

2019 ◽

Author(s):

Rudraswamy S B ◽

BHARATH V ◽

K Sanjay Nayak ◽

Balachandra H N ◽

Chireddy Chakradhar Reddy

Keyword(s):

Rf Mems ◽

Rf Mems Switch ◽

Mems Switch ◽

X Band

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High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

The Scientific World JOURNAL ◽

10.1155/2014/605894 ◽

2014 ◽

Vol 2014 ◽

pp. 1-7 ◽

Cited By ~ 3

Author(s):

Tejinder Singh ◽

Navjot Khaira

Keyword(s):

Insertion Loss ◽

Rf Mems ◽

High Resistivity ◽

Capacitive Switches ◽

Rf Mems Switch ◽

Mems Switch ◽

X Band ◽

High Resistivity Silicon ◽

Novel Design ◽

Better Than

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

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Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

Micro and Nanosystems ◽

10.2174/1876402912999201102200350 ◽

2020 ◽

Vol 12 ◽

Author(s):

Pampa Debnath ◽

Ujjwal Mondal ◽

Arpan Deyasi

Keyword(s):

Transmission Line ◽

Numerical Investigation ◽

Line Width ◽

Insertion Loss ◽

Return Loss ◽

Rf Mems ◽

Rf Mems Switch ◽

Ka Band ◽

Mems Switch ◽

Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

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