Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch

2019 ◽  
Vol 11 ◽  
Author(s):  
K. Srinivasa Rao ◽  
Ch. Gopichand ◽  
Koushik Guha ◽  
N. P. Maity ◽  
Reshmi Maity ◽  
...  
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Low Frequency ◽  
Parameter Variation ◽  
Rf Mems Switch ◽  
Modeling And Analysis ◽  
Mems Switch ◽  
X Band ◽  
Beam Thickness ◽  
Fixed Type

In this paper, a capacitive RF MEMS Switch is designed and simulated for different parameter variation like by varying beam thickness and different materials. Materials play an important role on the performance of the device. So it is necessary to select an appropriate material for the beam. Three different materials are taken for the dielectric layer among them Silicon nitrite shown good performance. Similarly three different materials are considered for the beam like gold, titanium, and platinum. From the three materials gold is chosen as the best material for the beam by ASBYS approach. Gold is having high thermal conductivity with young’s modulus 77Gpa.The pull-in voltage of three materials is given as 1.9V, 2.76V, 2.28V. Beam thickness is also impact for the switch, so in this paper variation of beam thickness are shows clearly, by considering different beam thickness like 0.5um to 3um. The variation of beam thickness is tabulated for the three materials among the 2um thickness is best beam thickness for switch to operated X-band applications. The switch exhibits the return loss (S11) of -21.36dB, insertion loss (S12) of -0.147dB, and this switch is having good isolation (S21) of 52.04dB. Finally to designed and simulated fixed-fixed type RF MEMS switch is applicable for low frequency like the X-band applications.

Effects of Packaging on RF MEMS Switch’s Return Loss

2009 ◽  
Vol 60-61 ◽  
pp. 94-98
Author(s):  
Le Yang ◽  
Xiao Ping Liao
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Real Life ◽  
Design Guidelines ◽  
Rf Mems Switch ◽  
Mems Packaging ◽  
Mems Switch ◽  
Ansoft Hfss ◽  
X Band ◽  
Before And After

Packaging of MEMS has been identified as one of the most significant areas of research for enabling MEMS usage in product applications. In order to make MEMS a real-life opportunity, it is vital to explore and develop an understanding of the possibilities and limitations of MEMS packaging. This paper presents several packaging structures for RF MEMS switch which based on GaAs substrate. The return loss of X-band RF MEMS switch before and after packaged can be simulated by Ansoft HFSS. The results show that return loss of RF MEMS switch after packaging deteriorated at least 3dB compared with that of before. Thermal mismatch caused by the variation of the temperature in the packaging process will introduce additional thermo-elastic strain and geometric deformation into the mechanical structure. The influence on return loss of the RF MEMS switch is researched in this paper too. Considering that, return loss simulated by HFSS decreases from -16.38dB to -16.88dB. Then, some design guidelines of RF MEMS packaging derived from the simulation of HFSS are also concluded at the end of the article.

scholarly journals Design and Implementation of Stoppers to Capacitive RF MEMS Switch for Low Frequency Applications

2019 ◽  
Vol 8 (4) ◽  
pp. 4260-4265
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Low Frequency ◽  
Parameter Analysis ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
S Parameter ◽  
Fixed Type ◽  
Electromagnetic Behavior ◽  
Rf Performance

This work presents the fixed-fixed type capacitive RF MEMS switch. The device additionally includes nonuniform meanders which can reduce the actuation voltage of the device. The switch accomplishes 0.5-1.5μN of applied force for actuation voltages of 6.9-7.9 V. The simulated and calculated spring steady is 1.49N/m to evaluate the actuation voltage the concept of stoppers is introduced in this work. Incorporating stoppers and meanders to the proposed device is to improve the RF performance. The proposed switch produces perfect electromagnetic behavior low insertion and high isolation with the addition of stoppers at the thickness of 1.2μm for 3μm air gap and aluminum nitride as dielectric layer followed by silicon nitride, silicon dioxide and Kapton polyimide in the device. The switch performance undergoes two conditions here with the addition and without inclusion of the stoppers. The RF Performance of the device with the stoppers, are lower insertion, better return losses and higher isolation are -0.07dB, -82 dB, -69dB at the 8- 8.1GHz frequency having Al3N4 as dielectric film followed by Si3N4 as-0.06dB, -77dB and -71dB then SiO2 as-0.06dB,-87dB, -71dB finally, Kapton polyimide as -0.06dB, -77dB,-76dB at 8- 8.5Ghz frequency. The S-parameter analysis like isolation, return loss and insertion loss are carried using FDTD tool CST which gives good performance.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

scholarly journals Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019 ◽  
pp. 43-50
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Design System ◽  
Nsga Ii ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Switch Design ◽  
Design Requirements

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

Research on the Dynamic Response of Capacitive RF-MEMS Switch

2013 ◽  
Vol 791-793 ◽  
pp. 1909-1912 ◽  
Author(s):  
Ming Xin Song ◽  
Rui Wu
Keyword(s):  
Differential Equation ◽  
Dynamic Response ◽  
Response Time ◽  
Rf Mems ◽  
Beam Width ◽  
Beam Length ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Beam Thickness ◽  
Simulation Results

Dynamic response time is an important performance parameter for capacitive RF-MEMS switch. This paper establishes a differential equation, in order to analyse the influencing factors of dynamic response time. The simulation results show that pulling-down time can reach 7.5μs when beam length equals to 200μm, beam width equals to 30μm, beam thickness equals to 1μm, beam material adopts Al and dielectric layer selects Si3N4.

scholarly journals An X band RF MEMS switch based on silicon-on-glass architecture

Sadhana ◽  
2009 ◽  
Vol 34 (4) ◽  
pp. 625-631 ◽  
Author(s):  
M. S. Giridhar ◽  
Ashwini Jambhalikar ◽  
J. John ◽  
R. Islam ◽  
C. L. Nagendra ◽  
...  
Keyword(s):  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
X Band

scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

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