A low power CMOS voltage reference generator with temperature and process compensation

2014 ◽  
Vol 81 (1) ◽  
pp. 313-324 ◽  
Author(s):  
Liangbo Xie ◽  
Jiaxin Liu ◽  
Yao Wang ◽  
Yu Han ◽  
Guangjun Wen
2013 ◽  
Vol 44 (12) ◽  
pp. 1145-1153 ◽  
Author(s):  
Yanhan Zeng ◽  
Yirong Huang ◽  
Yunling Luo ◽  
Hong-Zhou Tan

2013 ◽  
Vol 10 (8) ◽  
pp. 20130154-20130154 ◽  
Author(s):  
Yanhan Zeng ◽  
Yunling Luo ◽  
Jun Zhang ◽  
Zhuqian Gong ◽  
Hong-Zhou Tan

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740069 ◽  
Author(s):  
Liangwei Dong ◽  
Yueli Hu

A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/[Formula: see text]C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80[Formula: see text]C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.


2011 ◽  
Vol 32 (8) ◽  
pp. 085009 ◽  
Author(s):  
Honglai Wang ◽  
Xiaoxing Zhang ◽  
Yujie Dai ◽  
Yingjie Lü

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