Hemodynamic Changes Induced by Preventive Exposure to Terahertz Radiation at a Frequency Range Corresponding to Molecular Emission and Absorption Spectrum of Nitric Oxide in Animals under Conditions of Acute Stress

2011 ◽  
Vol 151 (2) ◽  
pp. 186-189
Author(s):  
V. F. Kirichuck ◽  
T. S. Velikanova ◽  
A. N. Ivanov
Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


2011 ◽  
Vol 183 (1) ◽  
pp. 26-30 ◽  
Author(s):  
Thomas Ritz ◽  
Erica S. Ayala ◽  
Ana F. Trueba ◽  
Charles D. Vance ◽  
Richard J. Auchus

Author(s):  
Giridhari Pal ◽  
Tapan Behl ◽  
Rajendra Kumar Behera ◽  
Sridevi Chigurupati ◽  
Mihir Chauhan ◽  
...  

1999 ◽  
Vol 579 ◽  
Author(s):  
Eric K. Chang ◽  
Michael Rohlfing ◽  
Steven G. Louie

ABSTRACTThe properties of silicon dioxide have been studied extensively over the years. However, there still remain major unanswered questions regarding the nature of the optical spectrum and the role of excitonic effects in this technologically important material. In this work, we present an ab initio study of the optical absorption spectrum of alpha-quartz, using a newly developed first-principles method which includes self-energy and electron-hole interaction effects. The quasiparticle band structure is computed within the GW approximation to obtain a quantitative description of the single-particle excitations. The Bethe-Salpeter equation for the electron-hole excitations is solved to obtain the optical spectrum and to understand the spatial extent and physical properties of the excitons. The theoretical absorption spectrum is found to be in excellent agreement with the measured spectrum. We show that excitonic effects are crucial in the frequency range up to 5 eV above the absorption threshold.


2021 ◽  
Vol 72 ◽  
pp. 101550
Author(s):  
Suzan Moustafa Hazzaa ◽  
Eman Salah El-Deen Elsayed Arafat ◽  
Abd El-Hamid Abdo Ismail ◽  
Abd Elmoneem Abd Eltorgoman ◽  
Seham Ahmed Abdelaziz ◽  
...  

1999 ◽  
Vol 88 (5) ◽  
pp. 1025-1029 ◽  
Author(s):  
Jose Eduardo Tanus-Santos ◽  
Heitor Moreno ◽  
Aldete Zappellini ◽  
Gilberto de Nucci

2002 ◽  
Vol 112 (1) ◽  
pp. 59-68 ◽  
Author(s):  
Chin-bin Yeh ◽  
James F Leckman ◽  
Fang-jung Wan ◽  
I-shin Shiah ◽  
Ru-band Lu

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