Nitrogen impurity effects of W–B–C–N quaternary thin film for diffusion barrier for Cu metallization

2008 ◽  
Vol 23 (2-4) ◽  
pp. 484-487 ◽  
Author(s):  
Soo In Kim ◽  
Chang Woo Lee
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Impurity Effects ◽  
Cu Metallization ◽  
Nitrogen Impurity

Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si

2008 ◽  
Vol 94 (3) ◽  
pp. 691-695 ◽  
Author(s):  
L. C. Leu ◽  
D. P. Norton ◽  
L. McElwee-White ◽  
T. J. Anderson
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

2011 ◽  
Vol 14 (2) ◽  
pp. H84 ◽  
Author(s):  
Chun-Xiao Yang ◽  
Shi-Jin Ding ◽  
David Wei Zhang ◽  
Peng-Fei Wang ◽  
Xin-Ping Qu ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization

2014 ◽  
Vol 809-810 ◽  
pp. 583-588
Author(s):  
Xue Mei Liu ◽  
Xiu Hua Chen ◽  
Yong Qiang Han ◽  
Wen Hui Ma ◽  
Jia Li He ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Si Substrate ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Structure Morphology ◽  
Large Particles ◽  
Before And After ◽  
Failure Temperature ◽  
Annealing Experiments

HfSiN/Cu/HfSiN/SiO2/Si multilayer films were prepared on Si substrate via magnetron sputtering technology. Annealing experiments of samples among 400°C and 700°C were carried out in order to investigate the anti-diffusion performance of HfSiN thin film to Cu. XRD, AFM and FPP were used to characterize the structure, morphology and the resistivity of the thin films before and after annealing, respectively. The failure temperature and failure mechanism of HfSiN thin film were analyzed. The anti-diffusion failure temperature of HfSiN thin film is 600 °C. And the main reason is that a large number of Cu large particles passed through HfSiN diffusion barrier layer and reacted with Si substrate and oxygen to generate Cu3Si and CuO with high resistance.

Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

2005 ◽  
Vol 152 (8) ◽  
pp. G594 ◽  
Author(s):  
Hoon Kim ◽  
Toshihiko Koseki ◽  
Takayuki Ohba ◽  
Tomohiro Ohta ◽  
Yasuhiko Kojima ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Property ◽  
Cu Metallization ◽  
And Diffusion

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

scholarly journals Diffusion Barrier Effect against Cu due to Interlayer between Cu Thin Film and Polyimide Substrate.

Shinku ◽  
1996 ◽  
Vol 39 (3) ◽  
pp. 103-110 ◽  
Author(s):  
Satoru IWAMORI ◽  
Takehiro MIYASHITA ◽  
Shin FUKUDA ◽  
Nobuhiro FUKUDA ◽  
Kazufuyu SUDOH
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Effect ◽  
Polyimide Substrate ◽  
Cu Thin Film
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