Structural, chemical, and optical properties of tin sulfide thin films as controlled by the growth temperature during co-evaporation and subsequent annealing

2013 ◽  
Vol 48 (11) ◽  
pp. 3943-3949 ◽  
Author(s):  
V. Robles ◽  
J. F. Trigo ◽  
C. Guillén ◽  
J. Herrero
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Growth Temperature ◽  
Subsequent Annealing ◽  
Tin Sulfide

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

Tin Sulfide Thin Films by Pulse Electrodeposition: Structural, Morphological, and Optical Properties

2010 ◽  
Vol 157 (3) ◽  
pp. H337 ◽  
Author(s):  
N. R. Mathews ◽  
Hiran B. M. Anaya ◽  
M. A. Cortes-Jacome ◽  
C. Angeles-Chavez ◽  
J. A. Toledo-Antonio
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulse Electrodeposition ◽  
Tin Sulfide

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

2013 ◽  
Vol 24 (7) ◽  
pp. 2541-2547 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
C. Mukherjee ◽  
P. Mishra ◽  
M. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Growth Temperature ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Electrical And Optical Properties

scholarly journals Effect of annealing atmosphere on structural and optical properties of CZTS thin films prepared by spin-coating

2018 ◽  
Vol 53 (1) ◽  
pp. 13-20 ◽  
Author(s):  
S Akhanda ◽  
R Matin ◽  
MS Bashar ◽  
M Sultana ◽  
A Kowsar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Visible Region ◽  
Annealing Atmosphere ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Copper Zinc ◽  
Czts Thin Films

Copper zinc tin sulfide (CZTS) thin films were deposited by spin coating procedure of a sol-gel prepared from the solution of copper (II)chloride, zinc acetate, tin (II) chloride and thiourea in 2-methoxyehtanol followed by annealing under two different atmospheres viz. N2 gas and Sulphur (S) powder at 530 °C for 5 minutes. The effect of different annealing atmosphere on the structural and optical properties of the CZTS thin films were investigated. The X-ray diffraction study showed higher intensity peaks for films annealed under N2 gas ambient. SEM study revealed that the surfaces of the films in both cases are non-uniform. Films annealed in N2 gas atmosphere showed better absorption coefficient (exceeding 104 cm-1 in the visible region) than the sulphurized ones. The optical band gap (Eg) of the films were found to be in the range of 1.46 - 1.53 eV.Bangladesh J. Sci. Ind. Res.53(1), 13-20, 2018

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