The influence of YSZ interlayer on microstructures and dielectric properties of BST thin films prepared by RF magnetron sputtering

2007 ◽  
Vol 18 (8) ◽  
pp. 877-882 ◽  
Author(s):  
Tianjin Zhang ◽  
Jinzhao Wang ◽  
Baishun Zhang ◽  
Juan Jiang ◽  
Runkun Pan ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Bst Thin Films

Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 544-548 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Hsiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Dielectric properties of La/Mn codoped Ba0.63Sr0.37TiO3 thin films prepared by RF magnetron sputtering

2014 ◽  
Vol 40 (8) ◽  
pp. 12573-12577 ◽  
Author(s):  
Lirong Song ◽  
Ying Chen ◽  
Genshui Wang ◽  
Lihui Yang ◽  
Tao Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Characterization of Mis Capacitor of Bst Thin Films Deposited on Si by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
S.H. Paek ◽  
C.S. Park ◽  
J.H. Won ◽  
K.S. Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Bst Thin Films ◽  
Mis Capacitor ◽  
High Dielectric ◽  
Mis Capacitors

AbstractThe application of high dielectric (Ba, Sr)TiO3 [BST] thin films for Metal-Insulator- Semiconductor(MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500–600 °C. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. The dielectric properties of MIS capacitors consisting of AI/BST/SiO2/Si sandwich structure were measured for various conditions. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. Also, current-voltage characteristics of the MIS capacitor were investigated. In order to reduce the leakage current in MIS capacitor, high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. By applying SiO2 layer between BST thin films and Si substrate, low leakage current of 10−10 order was observed. Futhermore, the leakage current showed the dependence on the oxygen concentration in plasma gas and the (Ba+Sr)/Ti ratio. Also, the BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. By C-V measurement, the polarity of effective oxide charge changed with the oxygen concentration in plasma gas and (Ba+Sr)/Ti ratio of sputtering target.

Sign in / Sign up

Export Citation Format

Share Document