Characterization of Mis Capacitor of Bst Thin Films Deposited on Si by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
S.H. Paek ◽  
C.S. Park ◽  
J.H. Won ◽  
K.S. Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Bst Thin Films ◽  
Mis Capacitor ◽  
High Dielectric ◽  
Mis Capacitors

AbstractThe application of high dielectric (Ba, Sr)TiO3 [BST] thin films for Metal-Insulator- Semiconductor(MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500–600 °C. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. The dielectric properties of MIS capacitors consisting of AI/BST/SiO2/Si sandwich structure were measured for various conditions. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. Also, current-voltage characteristics of the MIS capacitor were investigated. In order to reduce the leakage current in MIS capacitor, high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. By applying SiO2 layer between BST thin films and Si substrate, low leakage current of 10−10 order was observed. Futhermore, the leakage current showed the dependence on the oxygen concentration in plasma gas and the (Ba+Sr)/Ti ratio. Also, the BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. By C-V measurement, the polarity of effective oxide charge changed with the oxygen concentration in plasma gas and (Ba+Sr)/Ti ratio of sputtering target.

Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering

1998 ◽  
Vol 13 (4) ◽  
pp. 990-994 ◽  
Author(s):  
Tae-Gyoung In ◽  
Sunggi Baik ◽  
Sangsub Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Elevated Temperatures ◽  
Rf Magnetron Sputtering ◽  
Bst Thin Films ◽  
Bst Thin Film

The effects of Al and Nb doping on the leakage current behaviors were studied for the Ba0.5Sr0.5TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si(100) substrate by rf magnetron sputtering. Al and Nb were selected as acceptor and donor dopants, respectively, because they have been known to replace Ti-sites of the BST perovskite. The BST thin films prepared in situ at elevated temperatures showed relatively high leakage current density and low breakdown voltage. However, the BST thin films deposited at room temperature and annealed subsequently in air showed improved electrical properties. In particular, the leakage current density of the Al-doped BST thin film was measured to be around 10−8 A/cm2 at 125 kV/cm, which is much lower than those of the undoped or Nb-doped thin films. The results suggest that the Schottky barriers at grain boundaries in the film interior could determine the leakage behavior in the BST thin films.

Electrical and Physical Properties of Sodium Potassium Niobates Thin Films Prepared by rf Magnetron Sputtering Technology

2011 ◽  
Vol 239-242 ◽  
pp. 532-535
Author(s):  
Chien Min Cheng ◽  
Shih Fang Chen ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Hsiu Hsien Su
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Leakage Current Density ◽  
Current Density ◽  
Rf Magnetron Sputtering ◽  
Average Grain Size

Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively. For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.

Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

2002 ◽  
Vol 748 ◽  
Author(s):  
Shin Kikuchi ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Remnant Polarization ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

Memory Properties of SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 Thin Films Prepared on Si Substrate

2010 ◽  
Vol 434-435 ◽  
pp. 304-306
Author(s):  
Wen Cheng Tzou ◽  
Kai Huang Chen ◽  
Cheng Fu Yang ◽  
Ying Chung Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Chamber Pressure ◽  
Rf Power ◽  
Si Substrate ◽  
Oxygen Concentrations

In this study, ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and different oxygen concentrations. The surface morphology of deposited thin films is observed from the FESEM images, and the memory windows and leakage current of the Al/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer, respectively. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.

Leakage Current Behaviors of Ba0.5Sr0.5TiO3 Thin Films on Pt, RuO2, and Pt/RuO2 Bottom Electrodes

1996 ◽  
Vol 433 ◽  
Author(s):  
W. Jo ◽  
D. C. Kim ◽  
H. M. Lee ◽  
K. Y. Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Leakage Current ◽  
Rf Magnetron Sputtering ◽  
Dielectric Constants ◽  
Current Characteristics

AbstractBa0.5Sr0.5TiO3 thin films were grown by rf-magnetron sputtering. Pt and RuO2 films were used as bottom electrodes of the Ba0.5Sr0.5TiO3 thin films. Further, a Pt/RuO2 hybrid electrode was adopted as an electrode for the film. Structural properties of the Ba0.5Sr0.5TiO3 thin films were found to be closely related to the type of the bottom electrodes. Dielectric constants of the films on Pt, RuO2, and Pt/RuO2 were measured as 500, 320, and 450 in the range of 100 Hz ˜ 1 MHz, respectively. Leakage current characteristics of the films were also found to be strongly dependent on the type of the electrodes and their microstructures.

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