Structural, optical, electrical and morphological properties of ZnTe films deposited by electron beam evaporation

2010 ◽  
Vol 21 (12) ◽  
pp. 1229-1234 ◽  
Author(s):  
M. G. Syed Basheer Ahamed ◽  
V. S. Nagarethinam ◽  
A. Thayumanavan ◽  
K. R. Murali ◽  
C. Sanjeeviraja ◽  
...  
2000 ◽  
Vol 14 (25n27) ◽  
pp. 3128-3133
Author(s):  
A. MANCINI ◽  
V. BOFFA ◽  
G. CELENTANO ◽  
L. CIONTEA ◽  
M. DAMASCENI ◽  
...  

Y 2 O 3 and MgO-based buffer layer architectures on non-magnetic cube textured Ni-V substrates were studied for YBa 2 Cu 3 O 7-δ (YBCO) coated conductors fabrication using both pulsed laser deposition and electron beam evaporation. The Y 2 O 3 films exhibited a biaxial texture with φ and ω-scans full width at half maximum (FWHM) of about 11° and 7° and a smooth and continuous surface. YBCO thick films deposited on CeO 2/ Y 2 O 3/ Ni-V and CeO 2/ Y 2 O 3/ NiO/Ni-V architectures were mainly c-axis oriented showing a T C(R=0) above 85 K. MgO films were grown by electron beam evaporation both directly on metallic substrates and with a Pd intermediate layer. The MgO films grown on Ni-V substrates show a good texture and good surface morphological properties. The MgO deposition on Pd buffered Ni-V substrate leads to films with better structural properties with respect to MgO deposition on bare Ni-V substrate, showing φ and ω-scans FWHM up to 8° and 5°, respectively. In spite of the interdiffusion between Pd buffer layer and Ni-V substrate, the MgO films preserve their structural and morphological properties when annealed at typical YBCO deposition temperature.


2016 ◽  
Vol 8 (1) ◽  
pp. 21-28 ◽  
Author(s):  
M. K. Hasan ◽  
M. N. A. Shafi ◽  
M. N. A. Siddiquy ◽  
M. A. Rahim ◽  
M. J. Islam

Nickel (Ni) thin films in the thickness range 50?80 nm have been prepared by electron beam evaporation method at a base pressure of 4x10-5 mbar on silicon and glass substrates. Some samples have been annealed at 573 K for 1.5 h in open air. The resistivity of Ni films on silicon substrate is higher than the resistivity of Ni films on glass substrate. The TCR of Ni films is found to be positive which indicates that the Ni samples are metallic in nature. Coercivity of Ni films increases with increasing film thickness. The coercivity of 80 nm as-deposited Ni film on glass substrate is found to be ~ 9 Oe. The rms value of the surface roughness of 150 nm as-deposited Ni film on glass substrate is ~12 nm and it becomes ~ 7 nm after annealing. On the other hand, the coercivity of 90 nm and 160 nm as-deposited Ni films on silicon substrate are 50 Oe and 85 Oe, respectively. The rms value of surface roughness of 120 nm as-deposited Ni film on Si substrate is ~ 16 nm. It becomes ~ 3 nm after annealing.


1985 ◽  
Vol 131 (3-4) ◽  
pp. 261-266 ◽  
Author(s):  
M. Denhoff ◽  
B. Heinrich ◽  
A.E. Curzon ◽  
S. Gygax

2007 ◽  
Vol 201 (13) ◽  
pp. 6078-6083 ◽  
Author(s):  
C. Rebholz ◽  
M.A. Monclus ◽  
M.A. Baker ◽  
P.H. Mayrhofer ◽  
P.N. Gibson ◽  
...  

1990 ◽  
Vol 29 (5) ◽  
pp. 1068-1073 ◽  
Author(s):  
G. A. Ozin ◽  
Mark P. Andrews ◽  
C. G. Francis ◽  
H. X. Huber ◽  
K. Molnar

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  

1989 ◽  
Vol 136 (9) ◽  
pp. 2736-2740 ◽  
Author(s):  
Ken‐ichi Onisawa ◽  
Kazuo Taguchi ◽  
Moriaki Fuyama ◽  
Katsumi Tamura ◽  
Yoshio Abe ◽  
...  

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